Materials Science & Engineering

Taking charge of biomolecules

Nature Nanotechnology, 2(10), 596–597.

DNA-Templated Magnetic Nanowires with Different Compositions:  Fabrication and Analysis

Langmuir, 23(7), 3886–3890.

Patterning of Polypeptides on a Collagen-Terminated Tissue Surface

The Journal of Physical Chemistry C, 111(31), 11676–11681.

Formation and Characterization of Homogeneous and Mixed Self-Assembled Monolayers of Peptides and Alkanethiols on Indium Phosphide Surfaces

The Journal of Physical Chemistry C, 111(9), 3710–3718.

Ligation of Nanoparticle Coated DNA Cleaved with Restriction Enzymes

Chemistry of Materials, 19(15), 3586–3588.

Cantilever-Based Sensor for the Detection of Different Chromophore Isomers

Analytical Chemistry, 79(12), 4702–4708.

Molecular recognition of chromophore molecules to amine terminated surfaces

Applied Surface Science, 253(9), 4176–4181.

Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers

Applied Physics Letters, 90(12), 121917.

Combination of TEM and STEM to Investigate the Self-Assembly of Epitaxial Nanocomposites

Microscopy and Microanalysis, 13(S02).

Comparison study of aqueous binder systems for slurry-based processing

Materials Science and Engineering: A, 458(1-2), 17–24.

Plasmon-Assisted Local Temperature Control to Pattern Individual Semiconductor Nanowires and Carbon Nanotubes

Nano Letters, 7(11), 3523–3527.

On the Raman scattering from semiconducting nanowires

Journal of Raman Spectroscopy, 38(6), 697–703.

Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

Journal of Applied Physics, 102(12), 123507.

Defect distribution in a-plane GaN on Al2O3

Applied Physics Letters, 90(12), 121915.

Interfacial structure of a-plane GaN grown on r-plane sapphire

Applied Physics Letters, 90(8), 081918.

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

Physica B: Condensed Matter, 401-402, 302–306.

Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy

Journal of Crystal Growth, 300(1), 251–253.

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Journal of Crystal Growth, 300(1), 233–238.

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

Physica Status Solidi (c), 4(7), 2564–2567.

Bending in HVPE grown GaN films: origin and reduction possibilities

Physica Status Solidi (c), 4(7), 2256–2259.