Materials Science & Engineering

Sublimation growth and characterization of bulk aluminum nitride single crystals

JOURNAL OF CRYSTAL GROWTH, 179(3-4), 363–370.

Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs

Journal of the Korean Physical Society, 31(1), 202–205.

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

Low-field trap generation dependence on the injection current density in gate insulators - How valid are accelerated hot electron measurements?

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(7), 2517–2521.

Low energy ion beam assisted grain size evolution in thin film deposition

Rajan, K., Roy, R., Trogolo, J., & Cuomo, J. J. (1997, November). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 1270–1273.

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

Gas permeability and phase morphology of poly(1-(trimethylsilyl)-1-propyne)/poly(1-phenyl-1-propyne) blends

MACROMOLECULES, 30(16), 4766–4769.

Flow instability in the orthogonal machining of CP titanium

JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME, 119(3), 307–313.

Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 840–844.

Evidence of near-surface localization of excited electronic states in crystalline Si

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1196–1200.

Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys

JOURNAL OF APPLIED PHYSICS, 82(5), 2342–2348.

Constitution of Mn Al (Cu,Fe,Ni Or C) alloys near the magnetic tau phase

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 88(8), 620–624.

Comparison of electron affinity and Schottky barrier height of zirconium and copper-diamond interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1236–1240.

Analytical and numerical investigation of non-uniform straining and subgrain initiation in bicrystals in channel die compression

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 355(1730), 1905–1943.

An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions

Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 561–564.

Above bandgap dielectric function of epitaxial ZnSe layers

Journal of the Korean Physical Society, 31(4), L553–555.

Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy

Journal of the Korean Physical Society, 30(suppl.), 108–112.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.