Materials Science & Engineering

Development of the cylindrical wire electrical discharge machining process, part 2: Surface integrity and roundness

Journal of Manufacturing Science and Engineering, 124(3), 708–714.

Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature

Applied Physics Letters, 81(5), 823–825.

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

Method of making foamed materialsUSing surfactants and carbon dioxide

Washington, DC: U.S. Patent and Trademark Office.

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE Journal of Quantum Electronics, 38(8), 1006–1016.

Identification and quantitation of urea precipitates in flexible polyurethane foam formulations by X-ray spectromicroscopy

Macromolecules, 35(15), 5873–5882.

Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

Applied Physics Letters, 81(4), 676–678.

Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes

Applied Physics Letters, 81(5), 841–843.

Effect of an electric field on the plastic deformation kinetics of electrodeposited Cu at low and intermediate temperatures

Acta Materialia, 50(11), 2851–2866.

Development of the cylindrical wire electrical discharge machining process, part 1: Concept, design, and material removal rate

Journal of Manufacturing Science and Engineering, 124(3), 702–707.

Tunable barium strontium titanate thin film capacitors for RF and microwave applications

IEEE Microwave and Wireless Components Letters, 12(1), 3–5.

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

Applied Physics Letters, 80(23), 4419–4421.

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics, 46(6), 827–835.

Origins of silicon solar cell passivation by SiNx: H anneal

Journal of Non-Crystalline Solids, 299(2002 Apr 1), 1157–1161.

Optical phonons in hexagonal AlxInyGa1-x-yN (y approximate to 0.12)

Physica Status Solidi. B, Basic Solid State Physics, 234(3), 970–974.

Maskless pendeo-epitaxial growth of GaN films

Journal of Electronic Materials, 31(5), 421–428.

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science, 49(6), 3045–3050.

Experimental observation of electron velocity overshoot in AlN

Applied Physics Letters, 81(27), 5189–5191.

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Journal of Non-Crystalline Solids, 303(1), 40–49.