Materials Science & Engineering

Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming conductive structures and structures regarding same

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

Washington, DC: U.S. Patent and Trademark Office.

Method of forming haze- free BST films

Washington, DC: U.S. Patent and Trademark Office.

Method of forming a non-conformal layer over and exposing a trench

Washington, DC: U.S. Patent and Trademark Office.

Method of forming DRAM circuitry

Washington, DC: U.S. Patent and Trademark Office.

Method of etching a substantially amorphous TA2O5 comprising layer

Washington, DC: U.S. Patent and Trademark Office.

Method for controlling deposition of dielectric films

Washington, DC: U.S. Patent and Trademark Office.

Dielectric films and capacitor structures including same

Washington, DC: U.S. Patent and Trademark Office.

Dielectric cure for reducing oxygen vacancies

Washington, DC: U.S. Patent and Trademark Office.

DRAM processing methods

Washington, DC: U.S. Patent and Trademark Office.

Capacitor with high dielectric constant materials

Washington, DC: U.S. Patent and Trademark Office.

Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: application to Si-SiO2 interfaces

Aspnes, D. E., Hansen, J. K., Peng, H. J., Powell, G. D., & Wang, J. F. T. (2003, December). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 240, pp. 509–517.

Physical organogels composed of amphiphilic block copolymers and 1,3 : 2,4-dibenzylidene-D-sorbitol

JOURNAL OF COLLOID AND INTERFACE SCIENCE, 267(2), 509–518.

Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation

JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771.

The molecular structure and intermolecular interactions of 1,3: 2,4-dibenzylidene-D-sorbitol

Molecular Physics, 101(19), 3017–3027.

Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure

APPLIED PHYSICS LETTERS, 83(9), 1773–1775.

Piezoelectric resonating structures for microelectronic cooling

Smart Materials & Structures, 12(2), 181–187.

Optical and structural studies of hydride vapor phase epitaxy grown GaN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.