Materials Science & Engineering

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

Mg-related acceptors in GaN

Physica Status Solidi (c), 7(7-8), 1850–1852.

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physica Status Solidi (a), 207(6), 1305–1308.

The Sputtering Behavior of Polymeric Materials During Focused Ion Beam Nanomachining

Microscopy and Microanalysis, 16(S2), 206–207.

Structural materials issues for the next generation fission reactors

JOM, 62(9), 67–74.

Vanadium oxide aerogels: Nanostructured materials for enhanced energy storage

Comptes Rendus Chimie, 13(1-2), 130–141.

Fabrication and oxidation resistance of nanocrystalline Fe10Cr alloy

Journal of Materials Science, 45(17), 4884–4888.

Diamond tool wear when machining Al6061 and 1215 steel

Wear, 268(11-12), 1434–1441.

Topology of Homophase Grain Boundaries in Two-Dimensional Crystals: The Role of Grain Exchange Symmetry

Cmc-Computers Materials & Continua, 17(1), 1–17.

A connection between continuum and atomic description of interface thermal conductance

Journal of Applied Physics, 108(8).

Laser physical vapor deposition of nanocrystalline dots using nanopore filters

Applied Physics A: Materials Science and Processing, 98(2), 285–292.