Materials Science & Engineering

Optical metastability in bulk GaN single crystals

Applied Physics Letters, 71(4), 455–457.

Nucleation-limited amorphization of GaAs at elevated temperatures

Physical Review. B, Condensed Matter and Materials Physics, 55(19), 12852–12855.

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

Journal of the Electrochemical Society, 144(8), 2872–2881.

Low-temperature (less than 450 degrees), plasma-assisted deposition of poly-si thin films on SiO(2) and glass through interface engineering

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt. 1), 1035–1040.

Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

Applied Physics Letters, 71(12), 1709–1711.

Hydrogen incorporation and its temperature stability in sic crystals

Solid-State Electronics, 41(5), 677–679.

Hydrogen chemisorption on silica-supported PT clusters: in situ x-ray absorption spectroscopy

Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, 101(25), 4972–4977.

Hydrogen atom participation in metastable defect formation at Si-SiO(2) interfaces

Applied Surface Science, 117(1997 June), 192–197.

Growth of AlN and GaN on 6H SiC(0001) using a helium supersonic beam seeded with ammonia

Applied Physics Letters, 71(10), 1365–1367.

Grain growth in nanocrystalline iron prepared by mechanical attrition

Acta Materialia, 45(5), 2177–2186.

Gettering of iron in silicon on insulator wafers

Applied Physics Letters, 71(8), 1107–1109.

From micelles to randomly connected, bilayered membranes in dilute block copolymer blends

Langmuir, 13(8), 2177–2180.

Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si-O-F alloy films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 836–843.

Enhancement of the ductility of polycrystalline NaCl by an electric field

Scripta Materialia, 37(6), 767–771.

Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C

Applied Surface Science, 117(1997 June), 202–206.

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

Applied Physics Letters, 71(10), 1356–1358.

Critical temperature and ion flux dependence of amorphization in GaAs

Journal of Applied Physics, 81(11), 7681–7683.

Complex phase behavior of a disordered 'random' diblock copolymer in the presence of a parent homopolymer

Langmuir, 13(8), 2250–2258.

Atomistic simulations of the nanometer-scale indentation of amorphous-carbon thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 936–940.

Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs

Applied Physics Letters, 70(5), 610–612.