Materials Science and Engineering

Works Published in 1997

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Displaying works 81 - 100 of 184 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1997 journal article

Solid-state reaction in nanocrystalline Fe/SiC composites prepared by mechanical alloying

JOURNAL OF MATERIALS SCIENCE, 32(14), 3835โ€“3839.

By: T. Shen n, C. Koch*, K. Wang*, M. Quan & J. Wang

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240โ€“247.

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Real-time monitoring of surface processes by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807โ€“815.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells

IEEE PHOTONICS TECHNOLOGY LETTERS, 9(6), 728โ€“730.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: electric field effects; optical polarization; optoelectronic devices; piezoelectric semiconductor materials/devices; quantum-well lasers; semiconductor device modeling; semiconductor lasers, strain
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Photoluminescence from mechanically milled Si and SiO2 powders

PHYSICAL REVIEW B, 55(12), 7615โ€“7623.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical metastability in bulk GaN single crystals

APPLIED PHYSICS LETTERS, 71(4), 455โ€“457.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Nucleation-limited amorphization of GaAs at elevated temperatures

Physical Review. B, Condensed Matter and Materials Physics, 55(19), 12852โ€“12855.

By: R. Brown & J. Williams

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872โ€“2881.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 article

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 1035โ€“1040.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

Applied Physics Letters, 71(12), 1709โ€“1711.

By: R. Kalyanaraman n, R. Vispute n, S. Oktyabrsky n, K. Dovidenko n, K. Jagannadhamโ€‰ n, J. Narayan nโ€‰, J. Budai*, N. Parikh*, A. Suvkhanov*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

1997 journal article

Hydrogen incorporation and its temperature stability in SiC crystals

SOLID-STATE ELECTRONICS, 41(5), 677โ€“679.

By: J. Zavada*, R. Wilsonโ€‰*, F. Ren, S. Pearton* & R. Davis n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Hydrogen chemisorption on silica-supported Pt clusters: In situ X-ray absorption spectroscopy

JOURNAL OF PHYSICAL CHEMISTRY B, 101(25), 4972โ€“4977.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 article

Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 192โ€“197.

By: G. Lucovsky n, H. Yang n, Z. Jing n & J. Whitten nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Si-SiO2 interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

APPLIED PHYSICS LETTERS, 71(10), 1365โ€“1367.

By: V. Torres*, M. Stevensโ€‰*, J. Edwards*, D. Smithโ€‰*, R. Doak* & I. Tsong*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Grain growth in nanocrystalline iron prepared by mechanical attrition

ACTA MATERIALIA, 45(5), 2177โ€“2186.

By: T. Malow n & C. Koch n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107โ€“1109.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

From micelles to randomly connected, bilayered membranes in dilute block copolymer blends

LANGMUIR, 13(8), 2177โ€“2180.

By: J. Laurer n, J. Fungโ€‰ n, J. Sedat n, S. Smith n, J. Samseth n, K. Mortensen n, D. Agardโ€‰ n, R. Spontak nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 article

Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si-O-F alloy films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 836โ€“843.

By: G. Lucovsky n & H. Yang n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Enhancement of the ductility of polycrystalline NaCl by an electric field

SCRIPTA MATERIALIA, 37(6), 767โ€“771.

By: D. Yang & H. Conrad*

Source: Web Of Science
Added: August 6, 2018

1997 article

Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., โ€ฆ Kurz, H. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 202โ€“206.

By: G. Lucovsky n, A. Banerjee n, H. Niimi n, K. Koh n, B. Hinds n, C. Meyer*, G. Lupke*, H. Kurz*

co-author countries: Germany ๐Ÿ‡ฉ๐Ÿ‡ช United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Si-SiO2 interfaces; sub-oxide transition regions; plasma processing; rapid thermal annealing
Source: Web Of Science
Added: August 6, 2018

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