Materials Science & Engineering

Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1852–1856.

Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.1), 1316–1320.

Photoelectrochemical capacitance-voltage measurements in GaN

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May).

Phonon density of states of bulk gallium nitride

APPLIED PHYSICS LETTERS, 73(1), 34–36.

Oriented diamond film structures on nondiamond substrates

Washington, DC: U.S. Patent and Trademark Office.

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

Optical characterization of lateral epitaxial overgrown GaN layers

APPLIED PHYSICS LETTERS, 72(23), 2990–2992.

Nuclear electric quadrupole moment of Li-6

PHYSICAL REVIEW A, 57(4), 2539–2543.

Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films

Jarrendahl, K., & Arwin, H. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 114–118.

Morphological and isothermal diffusive probe analyses of low-molecular-weight diblock copolymers

MACROMOLECULES, 31(7), 2174–2184.

Microporous, responsive hydroxypropyl cellulose gels. 1. Synthesis and microstructure

MACROMOLECULES, 31(7), 2166–2173.

Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures

JOURNAL OF ELECTRONIC MATERIALS, 27(7), 908–914.

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.

Influence of an electric field on grain growth in extruded NaCl

SCRIPTA MATERIALIA, 38(9), 1443–1448.

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

Electron emission mechanism from cubic boron nitride-coated molybdenum emitters

APPLIED PHYSICS LETTERS, 72(22), 2909–2911.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242.

Effects of a pulsed magnetic treatment on the fatigue of low carbon steel

SCRIPTA MATERIALIA, 38(9), 1355–1358.

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.