Displaying works 81 - 100 of 215 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2002 article
Maskless pendeo-epitaxial growth of GaN films
Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.
2002 article
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation
Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.
2002 journal article
Experimental observation of electron velocity overshoot in AlN
APPLIED PHYSICS LETTERS, 81(27), 5189–5191.
2002 journal article
Effect of implantation temperature on damage accumulation in Ar-implanted GaN
MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.
2002 article
Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices
Lucovsky, G. (2002, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 303, pp. 40–49.
2002 journal article
Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation
Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101.
2002 article
Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides
Lucovsky, G. (2002, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 231–237.
2002 journal article
Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition
SURFACE SCIENCE, 496(3), 307–317.
Contributors: A. Gupta, H. Yang* & G. Parsons*
2002 journal article
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.
2002 article
Total-dose radiation response of hafnium-silicate capacitors
Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, JR, & Shaneyfelt, M. R. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3191–3196.
2002 article
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280.
2002 journal article
Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films
SOLID STATE COMMUNICATIONS, 121(6-7), 371–374.
2002 journal article
Role of nitrogen related complexes in the formation of defects in silicon
APPLIED PHYSICS LETTERS, 80(12), 2114–2116.
2002 article
Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials
Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 252–258.
2002 journal article
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.
2002 journal article
Orientation effects in chemical solution derived Pb(Zr-0.3,Ti-0.7)O-3 thin films on ferroelectric properties
THIN SOLID FILMS, 416(1-2), 264–270.
2002 journal article
Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates
Solid State Communications, 121(1), 9–13.
2002 journal article
Multiscale dewetting of low-molecular-weight block copolymer ultrathin films
MACROMOLECULAR RAPID COMMUNICATIONS, 23(3), 205–209.
2002 personal communication
Molecular simulation of the influence of chemical cross-links on the shear strength of carbon nanotube-polymer interfaces
Frankland, S. J. V., Caglar, A., Brenner, D. W., & Griebel, M. (2002, March 28).
2002 journal article
Manipulation of nylon-6 crystal structures with its alpha-cyclodextrin inclusion complex
MACROMOLECULES, 35(21), 8039–8044.
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