Materials Science & Engineering

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

JOURNAL OF APPLIED PHYSICS, 93(7), 4180–4184.

Highly CO2-permeable and selective polymer nanocomposite membranes

ADVANCED MATERIALS, 15(9), 729–733.

Gel network development inn AB, ABA, and AB/ABA block copolymer solutions inn a selective solvent

Polymer Gels: Fundamentals and Applications, 833, 248–261.

Effect of an electric field on microstructure coarsening in 60Sn40Pb solder joints

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 356(1-2), 8–16.

Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond

THIN SOLID FILMS, 440(1-2), 145–151.

Application of scanning transmission X-ray microscopy to the rubber industry

RUBBER CHEMISTRY AND TECHNOLOGY, 76(4), 803–811.

A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials

Journal of Non-Crystalline Solids, 326(2003 Oct 1), 14-.

Would diamond nanorods be stronger than fullerene nanotubes?

NANO LETTERS, 3(6), 805–809.

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141.

Supermolecular structures and devices made from same

Washington, DC: U.S. Patent and Trademark Office.

Spectroscopic study of chemical phase separation in zirconium silicate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1783–1791.

Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1777–1782.

Phase behavior of poly(methyl methacrylate)/poly(vinylidene fluoride) blends with and without high-pressure CO2

MACROMOLECULES, 36(12), 4245–4249.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

JOURNAL OF APPLIED PHYSICS, 93(12), 9542–9547.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.

Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

Washington, DC: U.S. Patent and Trademark Office.