Materials Science and Engineering

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

JOURNAL OF APPLIED PHYSICS, 93(7), 4180–4184.

Highly CO2-permeable and selective polymer nanocomposite membranes

ADVANCED MATERIALS, 15(9), 729–733.

Gel network development inn AB, ABA, and AB/ABA block copolymer solutions inn a selective solvent

Polymer Gels: Fundamentals and Applications, 833, 248–261.

Effect of an electric field on microstructure coarsening in 60Sn40Pb solder joints

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 356(1-2), 8–16.

Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond

THIN SOLID FILMS, 440(1-2), 145–151.

Application of scanning transmission X-ray microscopy to the rubber industry

RUBBER CHEMISTRY AND TECHNOLOGY, 76(4), 803–811.

A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials

Journal of Non-Crystalline Solids, 326(2003 Oct 1), 14-.

Would diamond nanorods be stronger than fullerene nanotubes?

NANO LETTERS, 3(6), 805–809.

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141.

Supermolecular structures and devices made from same

Washington, DC: U.S. Patent and Trademark Office.

Spectroscopic study of chemical phase separation in zirconium silicate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1783–1791.

Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1777–1782.

Phase behavior of poly(methyl methacrylate)/poly(vinylidene fluoride) blends with and without high-pressure CO2

MACROMOLECULES, 36(12), 4245–4249.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

JOURNAL OF APPLIED PHYSICS, 93(12), 9542–9547.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.