Displaying works 81 - 100 of 294 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2010 journal article
Towards Quantitative Analysis of STEM Image Contrast of Interfaces and Surfaces
Microscopy and Microanalysis, 16(S2), 1472–1473.
2010 journal article
Position averaged convergent beam electron diffraction: Theory and applications
Ultramicroscopy, 110(2), 118–125.
2010 journal article
Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy
Journal of Crystal Growth, 312(14), 2089–2092.
2010 journal article
Spatially resolved Raman spectroscopy on indium-catalyzed core–shell germanium nanowires: size effects
Nanotechnology, 21(10), 105703.
2010 journal article
Resonant Germanium Nanoantenna Photodetectors
Nano Letters, 10(4), 1229–1233.
2010 journal article
Semiconductor Nanowire Optical Antenna Solar Absorbers
Nano Letters, 10(2), 439–445.
2010 journal article
Tuning the Color of Silicon Nanostructures
Nano Letters, 10(7), 2649–2654.
2010 journal article
Radiation-induced defects in GaN
Physica Scripta, T141, 014015.
2010 journal article
Effect of Fe doping on the terahertz conductivity of GaN single crystals
Journal of Physics D: Applied Physics, 43(14), 145401.
2010 journal article
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
Applied Physics Letters, 97(3), 031110.
2010 journal article
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
Applied Physics Letters, 96(13), 133505.
2010 journal article
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
Applied Physics Letters, 96(10), 102109.
2010 journal article
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
Applied Physics Letters, 96(5), 051101.
2010 journal article
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Solid-State Electronics, 54(11), 1470–1473.
2010 journal article
Revealing extended defects in HVPE-grown GaN
Journal of Crystal Growth, 312(18), 2611–2615.
2010 journal article
Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
Journal of Crystal Growth, 312(8), 1205–1209.
2010 journal article
In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation
Journal of Electronic Materials, 39(10), 2237–2242.
2010 journal article
The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.
2010 journal article
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate
Physica Status Solidi (c), 7(7-8), 2190–2192.
2010 journal article
Mg-related acceptors in GaN
Physica Status Solidi (c), 7(7-8), 1850–1852.
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