Materials Science & Engineering

Compressive mechanical behavior of nanocrystalline Fe investigated with an automated ball indentation technique

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 252(1), 36–43.

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Coalesced oriented diamond films on nickel

JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123.

Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier

PHYSICAL REVIEW B, 58(3), 1643–1654.

Carbon nitride deposited using energetic species: A review on XPS studies

Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207–2215.

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

Analysis of optical spectra by Fourier methods

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 143–148.

An attenuated total reflectance cell for analysis of small molecule diffusion in polymer thin films with Fourier-transform infrared spectroscopy

POLYMER, 39(20), 4723–4728.

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE ELECTRON DEVICE LETTERS, 19(10), 367–369.

Thermoplastic elastomer gels. II. Effects of composition and temperature on morphology and gel rheology

Journal of Polymer Science. Part B, Polymer Physics, 36(14), 2513–2523.

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Structural characteristics of AIN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16(5), 2804–2815.

Seasonal variation of hydrographic and nutrient fields during the US JGOFS Arabian Sea Process Study

DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 45(10-11), 2053–2101.

Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.

Piezoelectric measurements with atomic force microscopy

APPLIED PHYSICS LETTERS, 73(26), 3851–3853.

Phase control of MoxN films via chemical vapor deposition

THIN SOLID FILMS, 324(1-2), 30–36.

Optical characterization of GaAs/AlAs short period superlattices

Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August). MICROELECTRONIC ENGINEERING, Vol. 43-4, pp. 265–270.

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.