Materials Science and Engineering

Stress relaxation activation in rubber-modified polymer systems exhibiting controlled miscibility through blending

MACROMOLECULES, 33(6), 2290–2292.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341.

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.

On the disclination-structural unit model of grain boundaries

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 281(1-2), 148–155.

Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films

Hugon, M. C., Desvignes, J. M., Agius, B., Vickridge, I. C., Kim, D. J., & Kingon, A. I. (2000, March). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 161, pp. 578–583.

Metal nanoparticles grown in the nanostructured matrix of poly(octadecylsiloxane)

Bronstein, L. M., Chernyshov, D. M., Valetsky, P. M., Wilder, E. A., & Spontak, R. J. (2000, October 31).

Integration of Pb(Zr0.52Ti0.48)O-3 epilayers with Si by domain epitaxy

APPLIED PHYSICS LETTERS, 76(11), 1458–1460.

Influence of an electric field on the plastic deformation of fine-grained MgO at high homologous temperatures

ACTA MATERIALIA, 48(16), 4045–4052.

Hot electron transport in AlN

JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869.

H loss mechanism during anneal of silicon nitride: Chemical dissociation

JOURNAL OF APPLIED PHYSICS, 88(10), 6055–6059.

Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

Ferroelectric and colossal magnetoresistive properties of a PbZr1-xTixO3/La1-xSrxMnO3 heterostructure film

Mitsugi, F., Yamagata, Y., Ikegami, T., Ebihara, K., Narayan, J., & Grishin, A. M. (2000, September). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 39, pp. 5418–5420.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

Elastic models of symmetrical < 002 > and < 011 > tilt grain boundaries in diamond

Elastic models of symmetrical < 002 > and < 011 > tilt grain boundaries in diamond. PHYSICAL REVIEW B, 61(2), 928–936.

Dispersion polymerization of polystyrene latex stabilized with novel grafted poly(ethylene glycol) macromers in 1-propanol/water

MACROMOLECULES, 33(18), 6664–6671.

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

SOLID-STATE ELECTRONICS, 44(4), 747–755.

Refractive indices and absorption coefficients of MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 76(8), 979–981.