Materials Science & Engineering

Electrical characterization of InGaN quantum well p-n heterostructures

Microelectronics Journal, 34(5-8), 455–457.

Cross-sectional Scanning Probe Microscopy of GaN-based p-n heterostructures

Microelectronics Journal, 34(5-8), 571–573.

Controlled synthesis of novel metalated poly(aminohexyl)-(aminopropyl)silsesquioxane colloids

Langmuir, 19(17), 7071–7083.

Chemically enhanced focused ion beam micro-machining of copper

Washington, DC: U.S. Patent and Trademark Office.

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1792–1797.

Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics

Washington, DC: U.S. Patent and Trademark Office.

Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1798–1803.

Aberration-corrected scanning transmission electron microscopy: the potential for nano- and interface science

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 94(4), 350–357.

Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

Journal of the Electrochemical Society, 150(5), F79–82.

TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects

Journal of Electronic Materials, 32(10), 994–999.

Synthesis of nanostructured titania powders via hydrolysis of titanium isopropoxide in supercritical carbon dioxide

Langmuir, 19(7), 2989–2994.

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Journal of Applied Physics, 94(9), 5720–5725.

Nanofibrillar networks in poly(ethyl methacrylate) and its silica nanocomposites

Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, 107(42), 11633–11642.

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Journal of Applied Physics, 94(1), 140–144.

Convergence acceleration scheme for self-consistent orthogonal- basis-set electronic structure methods

Molecular Simulation, 29(4), 269–286.

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

Journal of the Electrochemical Society, 150(5), F102–109.

Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

Physical Review. B, Condensed Matter and Materials Physics, 68(12).

Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface

Physical Review Letters, 90(13), 136102–136101.