Materials Science and Engineering

MIM capacitor with metal nitride electrode materials and method of formation

Washington, DC: U.S. Patent and Trademark Office.

Chemical vapor deposition method of forming a material over at least two substrates

Washington, DC: U.S. Patent and Trademark Office.

Capacitor with high dielectric constant materials and method of making

Washington, DC: U.S. Patent and Trademark Office.

Atomic layer deposition methods

Washington, DC: U.S. Patent and Trademark Office.

Atomic layer deposition methods

Washington, DC: U.S. Patent and Trademark Office.

System and method for inhibiting imprinting of capacitor structures of a memory

Washington, DC: U.S. Patent and Trademark Office.

Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming trenched isolation regions

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming regions of differing composition over a substrate

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers

Washington, DC: U.S. Patent and Trademark Office.

Method of providing a structure using self-aligned features

Washington, DC: U.S. Patent and Trademark Office.

Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material

Washington, DC: U.S. Patent and Trademark Office.

Method for reducing physisorption during atomic layer deposition

Washington, DC: U.S. Patent and Trademark Office.

Silicide contacts for Si/Ge devices

In Silicide technology for integrated circuits.

Circuit editing of copper and low-k dielectrics in nanotechnology devices

Mosselveld, F., Makarov, VV, Lundquist, T. R., Griffis, D. P., & Russell, P. E. (2004, June). JOURNAL OF MICROSCOPY, Vol. 214, pp. 246–251.

Special issue on nanostructured magnetic materials: Recent progress in magnetic nanostructures - Foreword

Tiwari, A. (2004, November). JOURNAL OF ELECTRONIC MATERIALS, Vol. 33, pp. 1253–1253.