Materials Science & Engineering

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

In 2007 International Semiconductor Device Research Symposium, Vols 1 and 2 (pp. 535–536). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000255857100276&KeyUID=WOS:000255857100276

Scanning electron microscopy of nanoscale chemical patterns

Acs Nano, 1(3), 191–201.

Prediction of high-temperature point defect formation in TiO2 from combined ab initio and thermodynamic calculations

Acta Materialia, 55(13), 4325–4337.

MgB2 thin films by hybrid physical-chemical vapor deposition

Physica C-Superconductivity and Its Applications, 456(1-2), 22–37.

Local impedance and microchemical analysis of electrical heterogeneities in multilayer electroceramic devices

Journal of Materials Research, 22(12), 3507–3515.

Interface Crystallography and structure in LaB6-ZrB2 directionally solidified eutectics

Journal of the American Ceramic Society, 90(8), 2603–2609.

Grain boundary blocking and segregation effects in yttrium-doped polycrystalline titanium dioxide

Solid State Ionics, 178(3-4), 187–194.

Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates

Journal of Crystal Growth, 300(1), 217–222.

Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition

Journal of Electronic Materials, 36(4), 346–352.

Electric conduction of thin-layer Ni-multilayer ceramic capacitors with core-shell structure BaTiO3

Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 46(5A), 2984–2990.

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

Journal of Electroceramics, 18(3-4), 261–268.

Diffusion in SixGe1-x/Si nanowire heterostructures

Journal of Nanoscience and Nanotechnology, 7(2), 717–720.

Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

Nano Letters, 7(10), 3241–3245.

Electronic structure of Cd, In, Sn substitutional defects in GaSe

Materials Research Society Symposium Proceedings, 994, 73–78. http://www.scopus.com/inward/record.url?eid=2-s2.0-45749109334&partnerID=MN8TOARS

Electronic structure of Cd, In, Sn substitutional defects in GaSe

In Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II (Vol. 994, pp. 73–78).

Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (vol 75, pg 1591, 2006)

Radiation Physics and Chemistry, Vol. 76, p. 907.

Magnetic properties of Ni-doped MgO diluted magnetic insulators Author(s

Applied Physics Letters, 90(13), 132511.

Epitaxial FePt thin films and nanodots integrated with Si (1 0 0)

Journal of Physics D: Applied Physics, 40(23), 7273–7280.

Preparation and characterization of bimetal thiolate monolayer protected clusters (MPCs)

Abstracts of Papers of the American Chemical Society, 234. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000207593902362&KeyUID=WOS:000207593902362

Poly(ethylene glycol) ligands for high-resolution nanoparticle mass spectrometry

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 129(21), 6706-+.