Materials Science and Engineering

Electrical characterization of diamond and graphite coated Mo field emitters

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(6), 2067–2071.

Control of diamond heteroepitaxy on nickel by optical reflectance

APPLIED PHYSICS LETTERS, 70(22), 2960–2962.

Comparison of microstructural features of diamond composite coatings with polycrystalline diamond or boron nitride brazed on tungsten carbide tools

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 15(4), 2262–2275.

Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors

JOURNAL OF APPLIED PHYSICS, 81(3), 1566–1574.

Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height

Baumann, P. K., Bozeman, S. P., Ward, B. L., & Nemanich, R. J. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 398–402.

Adhesion of diamond films on Ti-6Al-4V alloys

SURFACE & COATINGS TECHNOLOGY, 91(1-2), 32–36.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity

SOLID STATE COMMUNICATIONS, 101(2), 85–92.

Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories

INTEGRATED FERROELECTRICS, Vol. 14, pp. 51–57.

Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method

ULTRAMICROSCOPY, 69(3), 169–183.

Ohmic contacts to GaN by solid-phase regrowth

Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823.

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

JOURNAL OF MATERIALS RESEARCH, 12(9), 2249–2254.

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815.

Low-temperature deposition of optically transparent diamond using a low-pressure flat flame

DIAMOND AND RELATED MATERIALS, 6(12), 1862–1867.

Local atomic bonding in fluorinated silicon oxides: Bond-ionicity-controlled contributions of infrared-active vibrations to the static dielectric constant

Lucovsky, G., & Yang, H. (1997, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 36, pp. 1368–1373.

In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame

JOURNAL OF MATERIALS RESEARCH, 12(10), 2733–2742.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

Ellipsometric studies of Cd1-xMgxTe (0<=x<=0.5) alloys

APPLIED PHYSICS LETTERS, 71(2), 249–251.