Materials Science & Engineering

Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 k in insulated gate field effect transistors

Journal of Applied Physics, 81(3), 1566–1574.

Characterization of metal-diamond interfaces: electron affinity and Schottky barrier height

Diamond and Related Materials, 6(2-4), 398–402.

Adhesion of diamond films on Ti-6Al-4V alloys

Surface & Coatings Technology, 91(1-2), 32–36.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

Real-time optical analysis and control of semiconductor epitaxy: progress and opportunity

Solid State Communications, 101(2), 85–92.

Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non volatile memories

Integrated Ferroelectrics, 14(1-4), 51–57.

Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row cbed method

Ultramicroscopy, 69(3), 169–183.

Ohmic contacts to GaN by solid phase regrowth

Acta Physica Polonica. A, 92(4), 819–823.

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

Journal of Materials Research, 12(9), 2249–2254.

Mapping two dimensional arsenic distributions in silicon using dopant selective chemical etching technique

Journal of Applied Physics, 82(11), 5811–5815.

Low-temperature deposition of optically transparent diamond using a low-pressure flat flame

Diamond and Related Materials, 6(12), 1862–1867.

Local atomic bonding in fluorinated silicon oxides: bond ionicity controlled contributions of infrared active vibrations to the static dielectric constant

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 36(3b), 1368–1373.

In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame

Journal of Materials Research, 12(10), 2733–2742.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Applied Physics Letters, 71(14), 2023–2025.

Epitaxial deposition of gainn and inn using the rotating susceptor ale system

Applied Surface Science, 112(1997 Mar.), 98–101.

Ellipsometric studies of Cd(1-x)Mg(x)Te (0 less than or equal to x less than or equal to 0.5) alloys

Applied Physics Letters, 71(2), 249–251.

Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs

Journal of Materials Research, 12(9), 2325–2331.

Effect of an electric field on the plastic deformation and fracture of polycrystalline NaCl

Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 225(1-2), 173.

Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(1), 77–84.