Displaying works 121 - 140 of 184 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1997 journal article
Electrical characterization of diamond and graphite coated Mo field emitters
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(6), 2067–2071.
1997 journal article
Control of diamond heteroepitaxy on nickel by optical reflectance
APPLIED PHYSICS LETTERS, 70(22), 2960–2962.
1997 journal article
Comparison of microstructural features of diamond composite coatings with polycrystalline diamond or boron nitride brazed on tungsten carbide tools
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 15(4), 2262–2275.
Contributors: K. Jagannadham n, N. Fan n, R. Komanduri n & J. Narayan n
1997 journal article
Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors
JOURNAL OF APPLIED PHYSICS, 81(3), 1566–1574.
1997 article
Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height
Baumann, P. K., Bozeman, S. P., Ward, B. L., & Nemanich, R. J. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 398–402.
1997 journal article
Adhesion of diamond films on Ti-6Al-4V alloys
SURFACE & COATINGS TECHNOLOGY, 91(1-2), 32–36.
Contributors: W. Fan n, K. Jagannadham n & J. Narayan n
1997 journal article
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
Applied Physics Letters, 71(16), 2289–2291.
1997 journal article
Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity
SOLID STATE COMMUNICATIONS, 101(2), 85–92.
1997 article
Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
INTEGRATED FERROELECTRICS, Vol. 14, pp. 51–57.
1997 journal article
Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method
ULTRAMICROSCOPY, 69(3), 169–183.
1997 article
Ohmic contacts to GaN by solid-phase regrowth
Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823.
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
1997 journal article
Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN
JOURNAL OF MATERIALS RESEARCH, 12(9), 2249–2254.
1997 journal article
Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique
JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815.
1997 journal article
Low-temperature deposition of optically transparent diamond using a low-pressure flat flame
DIAMOND AND RELATED MATERIALS, 6(12), 1862–1867.
1997 article
Local atomic bonding in fluorinated silicon oxides: Bond-ionicity-controlled contributions of infrared-active vibrations to the static dielectric constant
Lucovsky, G., & Yang, H. (1997, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 36, pp. 1368–1373.
1997 journal article
In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame
JOURNAL OF MATERIALS RESEARCH, 12(10), 2733–2742.
1997 journal article
Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films
APPLIED PHYSICS LETTERS, 71(14), 2023–2025.
1997 article
Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system
McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.
1997 journal article
Ellipsometric studies of Cd1-xMgxTe (0<=x<=0.5) alloys
APPLIED PHYSICS LETTERS, 71(2), 249–251.