Materials Science & Engineering

Mixtures of polymer tails and loops grafted to an impenetrable interface

POLYMER, 39(25), 6339–6346.

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225.

Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon

JOURNAL OF APPLIED PHYSICS, 84(6), 3078–3084.

Lattice site location studies of ion implanted Li-8 in GaN

JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.

Ir and Ru bottom electrodes for (Ba, Sr) TiO3 thin films deposited by liquid delivery source chemical vapor deposition

THIN SOLID FILMS, 323(1-2), 285–290.

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

APPLIED PHYSICS LETTERS, 73(13), 1760–1762.

Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior

JOURNAL OF APPLIED PHYSICS, 84(6), 3382–3385.

Electric field strengthening during superplastic creep of Zn-5 wt% Al: A negative electroplastic effect

SCRIPTA MATERIALIA, 39(7), 847–851.

Effect of temperature on mechanical anisotropy of Zircaloy-4 sheet

METALS AND MATERIALS-KOREA, 4(4), 723–726.

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.

Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

THIN SOLID FILMS, 324(1-2), 107–114.

Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 1–14.

An investigation of the deformation mechanisms in Sn5%Sb alloy using tensile, creep and ABI tests from ambient to 473K

METALS AND MATERIALS-KOREA, 4(4), 799–802.

Advection of upwelled waters in the form of plumes off Oman during the Southwest Monsoon

DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 45(10-11), 2027–2052.

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108.

Triblock copolymer/homopolymer blends: Conformational changes, microstructural transition and macrophase separation

JOURNAL OF MATERIALS SCIENCE LETTERS, 17(7), 545–549.

The role of defects on thermophysical properties: thermal expansion of V, Nh, Ta, Mo and W

[Review of ]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 23(3), 101–137.

The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth, 190(1998 June), 24–28.

Synthesis of low oxygen concentration molybdenum nitride films

Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.