Displaying works 121 - 140 of 220 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2003 patent
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
Washington, DC: U.S. Patent and Trademark Office.
2003 journal article
Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon
JOURNAL OF APPLIED PHYSICS, 94(1), 140–144.
2003 journal article
Convergence acceleration scheme for self-consistent orthogonal-basis-set electronic structure methods
MOLECULAR SIMULATION, 29(4), 269–286.
2003 journal article
Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.
Contributors: D. Niu n, R. Ashcraft n, Z. Chen *, S. Stemmer * & G. Parsons n
2003 journal article
Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates
PHYSICAL REVIEW B, 68(12).
2003 journal article
Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface
PHYSICAL REVIEW LETTERS, 90(13).
2003 journal article
Sorption, transport, and structural evidence for enhanced free volume in poly(4-methyl-2-pentyne)/fumed silica nanocomposite membranes
CHEMISTRY OF MATERIALS, 15(1), 109–123.
2003 journal article
Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon
JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.
Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n
2003 journal article
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.
2003 journal article
On the origin and energy of triple junction defects due to the finite length of grain boundaries
INTERFACE SCIENCE, 11(4), 417–424.
2003 journal article
High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC
IEEE ELECTRON DEVICE LETTERS, 24(11), 677–679.
2003 journal article
Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition
JOURNAL OF MATERIALS RESEARCH, 18(1), 111–114.
2003 article
Field emission characterization of silicon tip arrays coated with GaN and diamond nanoparticle clusters
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 458–463.
2003 journal article
Electron emission from diamond nanoparticles on metal tips
APPLIED PHYSICS LETTERS, 82(17), 2904–2906.
2003 journal article
Carbonate formation during post-deposition ambient exposure of high-k dielectrics
APPLIED PHYSICS LETTERS, 83(17), 3543–3545.
Contributors: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n
2003 journal article
Band offset measurements of the GaN (0001)/HfO2 interface
Journal of Applied Physics, 94(11), 7155–7158.
2003 journal article
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.
2003 journal article
Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors
APPLIED PHYSICS LETTERS, 82(18), 3071–3073.
2003 article
Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films
DIAMOND AND RELATED MATERIALS, Vol. 12, pp. 474–480.
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