Materials Science and Engineering

Works Published in 2003

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Displaying works 121 - 140 of 220 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

JOURNAL OF APPLIED PHYSICS, 94(1), 140–144.

By: J. Lu n, M. Wagener n, G. Rozgonyi n, J. Rand & R. Jonczyk

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Convergence acceleration scheme for self-consistent orthogonal-basis-set electronic structure methods

MOLECULAR SIMULATION, 29(4), 269–286.

co-author countries: United States of America 🇺🇸
author keywords: convergence acceleration scheme; Newton-Raphson algorithm; self-consistent orthogonal-basis-set electronic structure method; HOMO-LUMO gap
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

PHYSICAL REVIEW B, 68(12).

co-author countries: Taiwan, Province of China 🇹🇼 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface

PHYSICAL REVIEW LETTERS, 90(13).

By: W. Yang n, M. Zeman n, H. Ade n & R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Sorption, transport, and structural evidence for enhanced free volume in poly(4-methyl-2-pentyne)/fumed silica nanocomposite membranes

CHEMISTRY OF MATERIALS, 15(1), 109–123.

By: T. Merkel*, B. Freeman*, R. Spontak n, Z. He*, I. Pinnau*, P. Meakin*, A. Hill*

co-author countries: Australia 🇦🇺 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

On the origin and energy of triple junction defects due to the finite length of grain boundaries

INTERFACE SCIENCE, 11(4), 417–424.

By: A. Nazarov, D. Bachurin*, O. Shenderova n & D. Brenner n

co-author countries: Russian Federation 🇷🇺 United States of America 🇺🇸
author keywords: grain boundary; triple junction; grain boundary dislocation; disclination; nanocrystal
Source: Web Of Science
Added: August 6, 2018

2003 journal article

High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC

IEEE ELECTRON DEVICE LETTERS, 24(11), 677–679.

By: G. Jessen*, R. Fitch*, J. Gillespie*, G. Via*, N. Moser*, M. Yannuzzi*, A. Crespo*, J. Sewell* ...

co-author countries: United States of America 🇺🇸
author keywords: GaN; high electron mobility transistor (HEMT); power; SiC
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition

JOURNAL OF MATERIALS RESEARCH, 18(1), 111–114.

By: W. Gilmore*, S. Chattopadhyay*, A. Kvit n, A. Sharma n, C. Lee*, W. Collis*, J. Sankar*, J. Narayan n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 article

Field emission characterization of silicon tip arrays coated with GaN and diamond nanoparticle clusters

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 458–463.

By: M. Hajra*, N. Chubun*, A. Chakhovskoi*, C. Hunt*, K. Liu*, A. Murali*, S. Risbud*, T. Tyler n, V. Zhirnov n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electron emission from diamond nanoparticles on metal tips

APPLIED PHYSICS LETTERS, 82(17), 2904–2906.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

APPLIED PHYSICS LETTERS, 82(18), 3071–3073.

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 article

Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 12, pp. 474–480.

co-author countries: Puerto Rico 🇵🇷 United States of America 🇺🇸
author keywords: nanocrystalline; plasma CVD; field emission
Source: Web Of Science
Added: August 6, 2018

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