Materials Science and Engineering

Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs

JOURNAL OF MATERIALS RESEARCH, 12(9), 2325–2331.

Effect of an electric field on the plastic deformation and fracture of polycrystalline NaCl

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 225(1-2), 173–183.

Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15(1), 77–84.

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 71(17), 2472–2474.

Compositionally symmetric diblock copolymer blends of moderate polydispersity

Journal of Polymer Science. Part B, Polymer Physics, 35(16), 2653–2658.

X-ray spectromicroscopy of polymers and tribological surfaces at beamline X1A at the NSLS

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 84(1-3), 53–71.

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Niimi, H., Koh, K., & Lucovsky, G. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368.

The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 55–58.

The characterization of strain, impurity content, and crush strength of synthetic diamond crystals

JOURNAL OF MATERIALS RESEARCH, 12(1), 253–263.

Tensile, creep, and ABI tests on Sn5%Sb solder for mechanical property evaluation

Murty, K. L., Haggag, F. M., & Mahidhara, R. K. (1997, July). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 839–846.

Strain effects on optical gain in wurtzite GaN

Journal of Applied Physics, 82(1), 386–391.

Shock-induced chemical reactions in a Ni/Al powder mixture

APPLIED PHYSICS LETTERS, 70(25), 3365–3367.

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210.

Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition

JOURNAL OF MATERIALS RESEARCH, 12(7), 1806–1815.

Microstructure coarsening during thermo-mechanical fatigue of Pb-Sn solder joints

Hacke, P. L., Sprecher, A. F., & Conrad, H. (1997, July). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 774–782.

Microstructural analysis of a cubic bicontinuous morphology in a neat SIS triblock copolymer

MACROMOLECULES, 30(13), 3938–3941.

MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & ElMasry, N. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 817–821.

Ion implantation of epitaxial GaN films: Damage, doping and activation

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466.