Materials Science & Engineering

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters, 71(17), 2472–2474.

Compositionally symmetric diblock copolymer blends of moderate polydispersity

Journal of Polymer Science. Part B, Polymer Physics, 35(16), 2653–2658.

X-ray spectromicroscopy of polymers and tribological surfaces at beamline X1A at the NSLS

Journal of Electron Spectroscopy and Related Phenomena, 84(1-3), 53–71.

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 364–368.

The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 55–58.

The characterization of strain, impurity content, and crush strength of synthetic diamond crystals

Journal of Materials Research, 12(1), 253–263.

Tensile, creep, and ABI tests on Sn5 percent Sb solder for mechanical property evaluation

Journal of Electronic Materials, 26(7), 839–846.

Strain effects on optical gain in wurtzite GaN

Journal of Applied Physics, 82(1), 386–391.

Shock-induced chemical reactions in a Ni/Al powder mixture

Applied Physics Letters, 70(25), 3365–3367.

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

Journal of the Electrochemical Society, 144(9), 3309–3315.

Optical memory effect in GaN epitaxial films

Applied Physics Letters, 71(2), 234–236.

Mocvd of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

Journal of Crystal Growth, 170(1-4), 817–821.

Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074–1079.

Microstructure evolution in amorphous GE/SI multilayers grown by magnetron sputter deposition

Journal of Materials Research, 12(7), 1806–1815.

Microstructure coarsening during thermo-mechanical fatigue of Pb-Sn solder joints

Journal of Electronic Materials, 26(7), 774–782.

Microstructural analysis of a cubic bicontinuous morphology in a neat SiS triblock copolymer

Macromolecules, 30(13), 3938–3941.

Indentation and microcutting fracture damage in a silicon carbide coating on an incoloy substrate

Surface & Coatings Technology, 88(1-3), 119–126.

ION Implantation of epitaxial GaN films: damage, doping and activation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 463–466.

High quality optoelectronic grade epitaxial AlN films on alpha-Al2O3, Si and 6h-SiC by pulsed laser deposition

Thin Solid Films, 299(1-2), 94–103.

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Diamond and Related Materials, 6(10), 1282–1288.