Materials Science & Engineering

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

Shear strength of electrorheological particle clusters

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 248(1-2), 161–164.

Self-aligned gate and source drain contacts in inverted-staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD

IEEE ELECTRON DEVICE LETTERS, 19(6), 180–182.

Samarium cobalt phase equilibria revisited; Relevance to permanent magnets

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 89(2), 114–118.

Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals

Integrated Ferroelectrics, 22(1-4), 603–614.

Pinholes, dislocations and strain relaxation in InGaN

MRS Internet Journal of Nitride Semiconductor Research, 3(39).

Novel developmentally regulated phosphoinositide binding proteins from soybean whose expression bypasses the requirement for an essential phosphatidylinositol transfer protein in yeast

EMBO JOURNAL, 17(14), 4004–4017.

Modeled tunnel currents for high dielectric constant dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.

Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239.

Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states

Mantese, L., Bell, K. A., Rossow, U., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 557–560.

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386.

In situ studies of metal-semiconductor interactions with synchrotron radiation

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.

Improvement of wear resistance of pulsed laser deposited diamond-like carbon films through incorporation of metals

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 53(3), 262–266.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).

Film thickness effects in the Co-Si1-xGex solid phase reaction

JOURNAL OF APPLIED PHYSICS, 84(8), 4285–4291.

Co-deposition of cobalt disilicide on silicon-germanium thin films

THIN SOLID FILMS, 320(2), 206–210.

Characterization of zirconium nitride coatings deposited by cathodic arc sputtering

SURFACE & COATINGS TECHNOLOGY, 107(2-3), 115–124.

A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs

Yang, H., & Lucovsky, G. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1082–1090.

X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces

JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048.

Virtual design and analysis of nanometer-scale sensor and device components

Journal of the British Interplanetary Society, 51(1998), 137–144.