Materials Science and Engineering

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108.

Triblock copolymer/homopolymer blends: Conformational changes, microstructural transition and macrophase separation

JOURNAL OF MATERIALS SCIENCE LETTERS, 17(7), 545–549.

The role of defects on thermophysical properties: thermal expansion of V, Nh, Ta, Mo and W

[Review of ]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 23(3), 101–137.

The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth, 190(1998 June), 24–28.

Synthesis of low oxygen concentration molybdenum nitride films

Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

Shear strength of electrorheological particle clusters

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 248(1-2), 161–164.

Self-aligned gate and source drain contacts in inverted-staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD

IEEE ELECTRON DEVICE LETTERS, 19(6), 180–182.

Samarium cobalt phase equilibria revisited; Relevance to permanent magnets

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 89(2), 114–118.

Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals

Integrated Ferroelectrics, 22(1-4), 603–614.

Pinholes, dislocations and strain relaxation in InGaN

MRS Internet Journal of Nitride Semiconductor Research, 3(39).

Novel developmentally regulated phosphoinositide binding proteins from soybean whose expression bypasses the requirement for an essential phosphatidylinositol transfer protein in yeast

EMBO JOURNAL, 17(14), 4004–4017.

Modeled tunnel currents for high dielectric constant dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.

Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239.

Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states

Mantese, L., Bell, K. A., Rossow, U., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 557–560.

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386.

In situ studies of metal-semiconductor interactions with synchrotron radiation

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.

Improvement of wear resistance of pulsed laser deposited diamond-like carbon films through incorporation of metals

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 53(3), 262–266.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).