Materials Science and Engineering

Works Published in 1999

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Displaying works 141 - 160 of 239 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1999 journal article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

By: C. Cho n, N. Yarykin n, R. Brown n, O. Kononchuk n, G. Rozgonyi n & R. Zuhr*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS, 75(25), 4001–4003.

By: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

co-author countries: Brazil 🇧🇷 United States of America 🇺🇸

Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Enhanced miscibility of low-molecular-weight polystyrene polyisoprene blends in supercritical CO2

JOURNAL OF PHYSICAL CHEMISTRY B, 103(26), 5472–5476.

By: T. Walker n, . Raghavan n, . Royer n, S. Smith n, G. Wignall n, Y. Melnichenko n, S. Khan n, R. Spontak n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte

JOURNAL OF APPLIED ELECTROCHEMISTRY, 29(1), 75–80.

By: S. Roberson n, D. Finello n & R. Davis n

co-author countries: United States of America 🇺🇸
author keywords: molybdenum nitride electrodes; capacitors; H2SO4 electrolytes
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579.

By: R. Croswell n, A. Reisman n, D. Simpson n, D. Temple* & C. Williams*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264.

By: Y. Wu*, Q. Xiang*, D. Bang*, G. Lucovsky n & M. Lin*

co-author countries: United States of America 🇺🇸
author keywords: reliability TDDB; TDDW; ultrathin oxide
Source: Web Of Science
Added: August 6, 2018

1999 journal article

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

APPLIED PHYSICS LETTERS, 75(2), 241–243.

By: N. Yarykin n, C. Cho n, G. Rozgonyi n & R. Zuhr*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 article

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310.

By: H. Yang n, H. Niimi n, Y. Wu n, G. Lucovsky n, J. Keister n & J. Rowe n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 article

The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices

Lucovsky, G., & Phillips, J. C. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 291–294.

By: G. Lucovsky n & J. Phillips

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 article

The effect of germanium on the Co-SiGe thin-film reaction

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.

author keywords: cobalt silicide; silicon-germanium; thickness effects; interfacial bonding; molecular beam epitaxy
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

By: Y. Wu, H. Niimi, H. Yang, G. Lucovsky & R. Fair

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.

By: S. Bidnyk*, B. Little*, T. Schmidt*, Y. Cho*, J. Krasinski*, J. Song*, B. Goldenberg*, W. Yang* ...

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Role and significance of source hardening in radiation embrittlement of iron and ferritic steels

JOURNAL OF NUCLEAR MATERIALS, 270(1-2), 115–128.

By: K. Murty n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

PHYSICAL REVIEW B, 59(20), 12977–12982.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Predictions of enhanced chemical reactivity at regions of local conformational strain on carbon nanotubes: Kinky chemistry

JOURNAL OF PHYSICAL CHEMISTRY B, 103(21), 4330–4337.

By: D. Srivastava*, D. Brenner*, J. Schall*, K. Ausman, M. Yu & R. Ruoff

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum n, T. Gehrke n, D. Thomson n, E. Carlson n, P. Rajagopal n, T. Smith n, D. Batchelor n, R. Davis n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optimal design of a high pressure organometallic chemical vapor deposition reactor

MATHEMATICAL AND COMPUTER MODELLING, 29(8), 65–80.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Observation of topography inversion in atomic force microscopy of self-assembled monolayers

NANOTECHNOLOGY, 10(4), 399–404.

By: B. Neves n, D. Leonard n, M. Salmon n, P. Russell n & E. Troughton*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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