Displaying works 141 - 160 of 239 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1999 journal article
Evolution of deep-level centers in p-type silicon following ion implantation at 85 K
APPLIED PHYSICS LETTERS, 74(9), 1263–1265.
1999 journal article
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
APPLIED PHYSICS LETTERS, 75(25), 4001–4003.
Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n
1999 journal article
Enhanced miscibility of low-molecular-weight polystyrene polyisoprene blends in supercritical CO2
JOURNAL OF PHYSICAL CHEMISTRY B, 103(26), 5472–5476.
1999 journal article
Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte
JOURNAL OF APPLIED ELECTROCHEMISTRY, 29(1), 75–80.
1999 journal article
Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579.
1999 journal article
Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264.
1999 journal article
The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K
APPLIED PHYSICS LETTERS, 75(2), 241–243.
1999 article
The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics
Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310.
1999 article
The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices
Lucovsky, G., & Phillips, J. C. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 291–294.
1999 article
The effect of germanium on the Co-SiGe thin-film reaction
Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.
1999 journal article
Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.
1999 journal article
Stimulated emission in GaN thin films in the temperature range of 300-700 K
JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.
1999 journal article
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.
1999 journal article
Role and significance of source hardening in radiation embrittlement of iron and ferritic steels
JOURNAL OF NUCLEAR MATERIALS, 270(1-2), 115–128.
1999 journal article
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
PHYSICAL REVIEW B, 59(20), 12977–12982.
1999 journal article
Predictions of enhanced chemical reactivity at regions of local conformational strain on carbon nanotubes: Kinky chemistry
JOURNAL OF PHYSICAL CHEMISTRY B, 103(21), 4330–4337.
1999 journal article
Pendeo-epitaxy of gallium nitride thin films
Applied Physics Letters, 75(2), 196–198.
1999 journal article
Optimal design of a high pressure organometallic chemical vapor deposition reactor
MATHEMATICAL AND COMPUTER MODELLING, 29(8), 65–80.
1999 journal article
Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN
Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.
1999 journal article
Observation of topography inversion in atomic force microscopy of self-assembled monolayers
NANOTECHNOLOGY, 10(4), 399–404.
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