Materials Science and Engineering

Atomic layer deposition methods

Washington, DC: U.S. Patent and Trademark Office.

Atomic layer deposition method

Washington, DC: U.S. Patent and Trademark Office.

Thin film dielectrics for capacitors and methods of making thereof

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

Washington, DC: U.S. Patent and Trademark Office.

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion device

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 2082–2085.

Thermal stability of lanthanum scandate dielectrics on Si(100)

APPLIED PHYSICS LETTERS, 89(24).

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.

Microstructural and biological properties of nanocrystalline diamond coatings

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 1935–1940.

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101.

Improving the prediction of annual average daily traffic for nonfreeway facilities by applying a spatial statistical method

In Transportation Research Record (pp. 20–29).

Field penetration and its contribution to field enhanced thermionic electron emission from nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 2006–2009.

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

Edge, L. F., Schlom, D. G., Stemmer, S., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1608–1612.

A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy

Fulton, C. C., Edge, L. F., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1934–1938.

Voltage controlled GaN on Si HFET power oscillator using thin?film ferroelectric varactor tuning

Proceedings of the 36th European Microwave Conference, (EuMW2006), Manchester, UK, 87–90.

Thickness profiles through fatigued bulk ceramic lead zirconate titanate

Journal of Applied Physics, 100(11).

Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday

Journal of Optoelectronics and Advanced Materials, 8(6), 1969–1978.

Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

Lucovsky, G., & Phillips, J. C. (2006, November 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 4509–4516.

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 1784–1788.

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

Journal of Optoelectronics and Advanced Materials, 8(6), 2039–2043.

Discrete Barium Strontium Titanate (BST) thin-film interdigital varactors on alumina: Design, fabrication, characterization, and applications

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, pp. 552–555.