Materials Science & Engineering

Dependence of the C49-C54 TiSi(2) phase transition temperature on film thickness and Si substrate orientation

Thin Solid Films, 299(1-2), 178–182.

The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization

MRS Internet Journal of Nitride Semiconductor Research, 2(6).

Aeration of livestock manure slurry and lagoon liquid for odor control: a review

Applied Engineering in Agriculture, 13(2), 245–249.

Phase behaviour of aqueous hydroxypropylcellulose mesophase mixtures: Molecular weight considerations

Liquid Crystals, 22(3), 359–365.

Synthesis and processing of superhard carbon nitride solids

International Materials Reviews, 42(4), 137–154.

Structure and stability of cobalt-silicon-germanium thin films

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 133(1-4), 84–89.

Profiles in collaboration - profile 2: entrepreneur trainers

ASEE Prism, 6(5), 24.

Method of reducing the viscosity of a black liquor

Washington, DC: U.S. Patent and Trademark Office.

Influence of a surface film on the particles on the electrorheological response

Journal of Applied Physics, 81(1), 383–389.

The physics of ohmic contacts to SiC

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 581–603.

Preferential Co-SI bonding at the Co/SiGe(100) interface

Applied Physics Letters, 71(21), 3060–3062.

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh density dynamic random access memories

Journal of Applied Physics, 82(5), 2359–2364.

Ion assisted laser processing of cubic boron nitride films

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 45(1-3), 30–35.

Influence of an electric field on the superplastic deformation of 3y-tzp

Scripta Materialia, 36(12), 1431–1435.

Highly oriented diamond deposited using a low pressure flat flame

Materials Letters, 32(1), 9–12.

Gas-source molecular beam epitaxy of III-V nitrides

Journal of Crystal Growth, 178(1/2), 87–101.

Dielectric and conduction effects in non-ohmic electrorheological fluids

Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 56(5 pt.B), 5789–5785.

Characteristics of stacking faults in AlN thin films

Journal of Applied Physics, 82(9), 4296–4288.