Materials Science and Engineering

Laser scanning confocal microscopy study of dye diffusion in fibers

MACROMOLECULES, 33(12), 4478–4485.

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

Direct measurement of interfacial curvature distributions in a bicontinuous block copolymer morphology

PHYSICAL REVIEW LETTERS, 84(3), 518–521.

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1764–1769.

Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition

JOURNAL OF MATERIALS RESEARCH, 15(3), 633–641.

Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1757–1763.

Addition of a block copolymer to polymer blends produced by cryogenic mechanical alloying

MACROMOLECULES, 33(4), 1163–1172.

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118.

Sellmeier parameters for ZnGaP2 and GaP

JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565.

Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys

JOURNAL OF APPLIED PHYSICS, 87(3), 1287–1290.

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

MATERIALS LETTERS, 42(1-2), 121–129.

III-nitrides: Growth, characterization, and properties

[Review of ]. JOURNAL OF APPLIED PHYSICS, 87(3), 965–1006.

Climatology of diurnal trends and vertical distribution of ozone in the atmospheric boundary layer in urban North Carolina

JOURNAL OF THE AIR & WASTE MANAGEMENT ASSOCIATION, 50(1), 54–64.

Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, January). JOURNAL OF ELECTRONIC MATERIALS, Vol. 29, pp. 106–111.

Microstructure and electrical resistivity of Cu and Cu3Ge thin films on Si1-xGex alloy layers

JOURNAL OF APPLIED PHYSICS, 87(1), 365–368.

Structural and tribological characteristics of diamond-like carbon films deposited by pulsed laser ablation

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 77(2), 139–143.