Materials Science & Engineering

Utilization of multiple-stage sintering to control ni electrode continuity in ultrathin Ni-BaTiO3 multilayer capacitors

Journal of the American Ceramic Society, 90(12), 3811–3817.

Structure and dielectric properties of amorphous tantalum pentoxide thin film capacitors

2007 Annual Report Conference on Electrical Insulation and Dielectric Phenomena (pp. 815–818).

Structural characterization of exfoliated graphite nanofibers

Carbon, 45(4), 751–759.

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

2007 International Semiconductor Device Research Symposium, Vols 1 and 2 (pp. 535–536).

Scanning electron microscopy of nanoscale chemical patterns

Acs Nano, 1(3), 191–201.

Prediction of high-temperature point defect formation in TiO2 from combined ab initio and thermodynamic calculations

Acta Materialia, 55(13), 4325–4337.

MgB2 thin films by hybrid physical-chemical vapor deposition

Physica C-Superconductivity and Its Applications, 456(1-2), 22–37.

Local impedance and microchemical analysis of electrical heterogeneities in multilayer electroceramic devices

Journal of Materials Research, 22(12), 3507–3515.

Interface Crystallography and structure in LaB6-ZrB2 directionally solidified eutectics

Journal of the American Ceramic Society, 90(8), 2603–2609.

Grain boundary blocking and segregation effects in yttrium-doped polycrystalline titanium dioxide

Solid State Ionics, 178(3-4), 187–194.

Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates

Journal of Crystal Growth, 300(1), 217–222.

Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition

Journal of Electronic Materials, 36(4), 346–352.

Electric conduction of thin-layer Ni-multilayer ceramic capacitors with core-shell structure BaTiO3

Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 46(5A), 2984–2990.

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

Journal of Electroceramics, 18(3-4), 261–268.

Diffusion in SixGe1-x/Si nanowire heterostructures

Journal of Nanoscience and Nanotechnology, 7(2), 717–720.

Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

Nano Letters, 7(10), 3241–3245.

Electronic structure of Cd, In, Sn substitutional defects in GaSe

In Materials Research Society Symposium Proceedings (Vol. 994, pp. 73–78).

Electronic structure of Cd, In, Sn substitutional defects in GaSe

In Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II (Vol. 994, pp. 73–78).

Magnetic properties of Ni-doped MgO diluted magnetic insulators Author(s

Applied Physics Letters, 90(13), 132511.

Epitaxial FePt thin films and nanodots integrated with Si (1 0 0)

Journal of Physics D: Applied Physics, 40(23), 7273–7280.