Materials Science & Engineering

Molecular Interactions on InxGa1−xN

In G. Shaw III, L. V. Starman, B. C. Prorok, & C. Furlong (Eds.), MEMS and Nanotechnology (Vol. 5, pp. 109–114).

Intrinsic delay of permeable base transistor

Journal of Applied Physics, 116(4), 044505.

Nickel Oxide Hole Injection/Transport Layers for Efficient Solution-Processed Organic Light-Emitting Diodes

Chemistry of Materials, 26(15), 4528–4534.

Air-Stable, Solution-Processed Oxide p–n Heterojunction Ultraviolet Photodetector

ACS Applied Materials & Interfaces, 6(3), 1370–1374.

Stable solution processed hole injection material for organic light-emitting diodes

Organic Electronics, 15(10), 2513–2517.

Phosphorescent dye-doped hole transporting layer for organic light-emitting diodes

Organic Electronics, 15(10), 2381–2386.

Phosphorescent organic light emitting diodes with a cross-linkable hole transporting material

Organic Electronics, 15(7), 1702–1706.

All Solution-Processed Inorganic/Organic Hybrid Permeable Metal-Base Transistor

Small, 10(18), 3650–3654.

5.3: Highly Efficient Phosphorescent OLEDs Fabricated on Corrugated High-Index-Refractive Substrates

SID Symposium Digest of Technical Papers, 45(1), 40–41.

Batch-to-Batch Variation of Polymeric Photovoltaic Materials: its Origin and Impacts on Charge Carrier Transport and Device Performances

Advanced Energy Materials, 4(16), 1400768.

Organic Photovoltaic Cells: Dielectric Effect on the Photovoltage Loss in Organic Photovoltaic Cells (Adv. Mater. 35/2014)

Advanced Materials, 26(35), 6045–6045.

Dielectric Effect on the Photovoltage Loss in Organic Photovoltaic Cells

Advanced Materials, 26(35), 6125–6131.

Low-Noise Multispectral Photodetectors Made from All Solution-Processed Inorganic Semiconductors

Advanced Functional Materials, 9, n/a-n/a.

Effect of Nano-Porosity on High Gain Permeable Metal-Base Transistors

Advanced Functional Materials, 24(38), 6056–6065.

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13), 134103.

Direct Lattice Parameter Measurements Using HAADF-STEM

Microscopy and Microanalysis, 20(S3), 1050–1051.

Correlative Imaging of Stacking Faults using Atom Probe Tomography (APT) and Scanning Transmission Electron Microscopy (STEM)

Microscopy and Microanalysis, 20(S3), 996–997.

Application of the Projective Standard Deviation to STEM Imaging and Analysis

Microscopy and Microanalysis, 20(S3), 118–119.

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Journal of Crystal Growth, 387, 16–22.

Putting a New Spin on Scanning Transmission Electron Microscopy

Microscopy and Microanalysis, 20(S3), 140–141.