Power Semiconductor Research Center

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY, 5, 1058–1084.

FET Junction Temperature Monitoring Using Novel On-Chip Solution

2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2475–2482.

Platinum and palladium price forecasting through neural networks

Xu, X., & Zhang, Y. (2024, March 14). COMMUNICATIONS IN STATISTICS-SIMULATION AND COMPUTATION.

Forecasting wholesale prices of yellow corn through the Gaussian process regression

Jin, B., & Xu, X. (2024, March 1). NEURAL COMPUTING & APPLICATIONS.

Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 39(3), 2896–2911.

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

(2nd ed.). Amsterdam: Elsevier.

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

IEEE ACCESS, 11, 89277–89289.

Silicon Carbide Power Devices: Progress and Future Outlook

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411.

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Disordered MgB2 superconductor critical temperature modeling through regression trees

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 597.

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.

Coking coal futures price index forecasting with the neural network

Xu, X., & Zhang, Y. (2022, April 13). MINERAL ECONOMICS.

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.

Contemporaneous causality among one hundred Chinese cities

Xu, X., & Zhang, Y. (2022, January 23). EMPIRICAL ECONOMICS.

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.