Power Semiconductor Research Center

College of Engineering

Works Published in 2021

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: October 4, 2021

2021 article

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

Source: Web Of Science
Added: September 20, 2021

2021 article

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

Source: Web Of Science
Added: September 20, 2021

2021 article

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

Source: Web Of Science
Added: September 20, 2021

2021 article

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: September 20, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021.

By: A. Agarwal, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

Source: Web Of Science
Added: September 13, 2021

2021 article

Modeling and prediction of lattice parameters of binary spinel compounds (AM(2)X(4)) using support vector regression with Bayesian optimization

Alade, I. O., Zhang, Y., & Xu, X. (2021, August 3). NEW JOURNAL OF CHEMISTRY.

By: I. Alade, Y. Zhang & X. Xu

Source: Web Of Science
Added: August 9, 2021

2021 journal article

Machine learning modeling of metal surface energy

MATERIALS CHEMISTRY AND PHYSICS.

By: Y. Zhang & X. Xu

Source: Web Of Science
Added: July 6, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: May 24, 2021

2021 journal article

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: May 24, 2021

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: April 19, 2021

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: April 12, 2021

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: March 22, 2021

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal, A. Kanale & B. Baliga

Source: Web Of Science
Added: December 14, 2020

2021 journal article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: October 19, 2020