Power Semiconductor Research Center

College of Engineering

Works Published in 2020

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: August 17, 2020

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 journal article

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

By: K. Han & B. Baliga

Source: Web Of Science
Added: April 6, 2020

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020