Power Semiconductor Research Center

Disordered MgB2 superconductor critical temperature modeling through regression trees

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS.

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS.

Coking coal futures price index forecasting with the neural network

Xu, X., & Zhang, Y. (2022, April 13). MINERAL ECONOMICS.

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES.

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.

Contemporaneous causality among one hundred Chinese cities

Xu, X., & Zhang, Y. (2022, January 23). EMPIRICAL ECONOMICS.

Predicting the superconducting transition temperature and relative resistance ratio in YBa2Cu3O7 films

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS.