TY - JOUR TI - The accumulation channel driven bipolar transistor (ACBT) AU - Thapar, N AU - Baliga, BJ T2 - IEEE ELECTRON DEVICE LETTERS AB - A new three-terminal power switch called the Accumulation Channel driven Bipolar Transistor (ACBT) is proposed and experimentally demonstrated. In the on-state, the characteristics of the ACBT have been found to approach those of a P-I-N rectifier with a MOSFET in series for regulating its current, an equivalent circuit considered to be an ideal for MOS/Bipolar power devices. Unlike previous devices, the high off-state voltage is supported by the formation of a potential barrier to the flow of electrons from the N/sup +/ emitter into the N-drift region within a depletion region. The absence of the P-base region within the ACBT cells eliminates the parasitic four layer PNPN thyristor which had limited the performance of previous MOS/Bipolar transistor structures. Consequently, the ACBT structure has large maximum controllable and surge current densities in addition to low on-state voltage drop and high-voltage current saturation capability. DA - 1997/5// PY - 1997/5// DO - 10.1109/55.568754 VL - 18 IS - 5 SP - 178-180 SN - 1558-0563 ER - TY - JOUR TI - Output characteristics of the dual channel EST AU - Sridhar, S AU - Baliga, BJ T2 - SOLID-STATE ELECTRONICS AB - Analysis of the output characteristics of the Dual Channel EST (DC-EST) is provided for the first time in this article. It is demonstrated by analytical modelling and with the aid of two dimensional numerical simulations that the output resistance in the region of current saturation is determined by the activation of the narrow base NPN transistor in the IGBT segment. Based upon this model, the experimentally observed degradation in the output resistance with an increase in the distance between the shorts in the P-base region of the main thyristor segment can be explained. This model is shown to be consistent with the experimentally observed degradation in the output resistance with larger design rules used for device fabrication because this determines the current level at which the NPN transistor becomes activated. The observed reduction in the output resistance results in a degradation in the forward bias safe operating area. DA - 1997/8// PY - 1997/8// DO - 10.1016/S0038-1101(97)00036-1 VL - 41 IS - 8 SP - 1133-1138 SN - 1879-2405 ER - TY - JOUR TI - Analysis of on-state carrier distribution in the DI-LIGBT AU - Sunkavalli, R AU - Baliga, BJ T2 - SOLID-STATE ELECTRONICS AB - The on-state carrier distribution in the drift region of the DI-LIGBT with thin silicon layers is studied in this paper. Numerical simulations indicate that carrier enhancement due to the formation of an accumulation region underneath the gate near the emitter has a strong impact on the on-state carrier distribution. This results in improved on-state characeristics by reducing the middle region voltage drop, due to the enhanced conductivity modulation of the drift region. A simple one-dimensional analytical modeling is carried out to study the effect of this carrier enhancement on on-state voltage drop. The results are verified by measurements performed on DI-LIGBTs fabricated on 5 and 10 μm thick silicon layers. DA - 1997/5// PY - 1997/5// DO - 10.1016/S0038-1101(96)00247-X VL - 41 IS - 5 SP - 733-738 SN - 1879-2405 ER - TY - JOUR TI - High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes AU - Shenoy, PM AU - Baliga, BJ T2 - ELECTRONICS LETTERS AB - A novel P+polysilicon/N-6H-SiC heterojunction diode is reported which combines the advantages of both Schottky barrier diodes and pn junction diodes. The unterminated heterojunction diodes have excellent rectification characteristics and a high breakdown voltage of 220 V. The forward voltage drop measured at 100 A/cm2 is 2.7 V, close to the calculated value of 2.4 V. The suitability of this device for high speed switching applications was experimentally confirmed using reverse recovery measurements. DA - 1997/6/5/ PY - 1997/6/5/ DO - 10.1049/el:19970678 VL - 33 IS - 12 SP - 1086-1087 SN - 0013-5194 KW - polysilicon KW - semiconductor diodes KW - silicon carbide ER - TY - JOUR TI - SiC device edge termination using finite area argon implantation AU - Alok, D AU - Baliga, BJ T2 - IEEE TRANSACTIONS ON ELECTRON DEVICES AB - In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 /spl mu/m of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area. DA - 1997/6// PY - 1997/6// DO - 10.1109/16.585559 VL - 44 IS - 6 SP - 1013-1017 SN - 0018-9383 ER - TY - JOUR TI - SIMFCT: A MOS-gated FCT with high voltage-current saturation AU - Sridhar, S AU - Baliga, BJ T2 - IEEE TRANSACTIONS ON ELECTRON DEVICES AB - This paper describes the SIMFCT: a new MOS-gated power device in which SIMOX technology is used to integrate a series MOSFET with a vertical FCT structure. The SIMFCT, exhibits high voltage-current saturation beyond the breakdown voltage of the lateral series MOSFET, and since it does not have a parasitic thyristor, it possesses a superior FBSOA when compared to the IGBT. The physics of device operation, results of two-dimensional numerical simulations and experimentally measured characteristics on SIMFCT structures fabricated using a nine mask SIMOX Smart Power process are presented. DA - 1997/11// PY - 1997/11// DO - 10.1109/16.641374 VL - 44 IS - 11 SP - 2017-2021 SN - 1557-9646 ER - TY - JOUR TI - Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation AU - Alok, D AU - Baliga, BJ T2 - JOURNAL OF THE ELECTROCHEMICAL SOCIETY AB - The kinetics of a thermal oxidation scheme with enhanced growth rate for 6H‐SiC is reported in this paper. This scheme is based upon the formation of a thick amorphous layer created using high‐dose ion implantation followed by thermal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region, when compared to the unimplanted (monocrystalline SiC) region, after dry oxidation. The oxide growth rate was parabolic in nature in the amorphized region, in contrast to a mixed linear‐parabolic growth rate observed for the monocrystalline region. DA - 1997/3// PY - 1997/3// DO - 10.1149/1.1837545 VL - 144 IS - 3 SP - 1135-1137 SN - 0013-4651 ER - TY - JOUR TI - Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes AU - Sunkavalli, R AU - Baliga, BJ AU - Tamba, A T2 - IEEE TRANSACTIONS ON ELECTRON DEVICES AB - The concept of the RESURF DI lateral merged PiN Schottky (LMPS) diodes is introduced and experimentally demonstrated. The LMPS diode combines the advantages of fast switching times of Schottky diodes with the low forward drops exhibited by LPiN diodes. An increase in the ratio of Schottky area relative to the p-n junction area is shown to result in superior reverse recovery characteristics at the expense of an increase in the forward voltage drop. This tradeoff between forward drop and switching speed is achieved in a simple manner by varying the relative areas of the Schottky and p-n junction regions during device design. Since lifetime control is not a viable option in integrated diodes used in power IC's, the LMPS concept allows tailoring the characteristics of integrated power diodes to the application frequency for the first time. DA - 1997/11// PY - 1997/11// DO - 10.1109/16.641373 VL - 44 IS - 11 SP - 2011-2016 SN - 0018-9383 ER - TY - JOUR TI - Current saturation mechanism and FBOSA of the SIMEST AU - Sridhar, S AU - Baliga, BJ T2 - SOLID-STATE ELECTRONICS AB - It is demonstrated that the current saturation mechanism for the SIMEST is due to operation of the thyristor region in a non-regenerative mode by the shunting of holes from the P-base region via a lateral P-MOSFET, a mechanism not observed in previous power devices. The FBSOA of the SIMEST is shown to be limited by avalanche breakdown in the drift region at low current densities and by the breakdown of the lateral N-channel MOSFET at high current densities. The effects of the parametric variations on the output characteristics and the FBSOA are reported for the first time. DA - 1997/4// PY - 1997/4// DO - 10.1016/S0038-1101(96)00202-X VL - 41 IS - 4 SP - 561-566 SN - 0038-1101 ER -