TY - PAT TI - Passivated silicon carbide devices with low leakage current and method of fabricating AU - Alok, D. AU - Arnold, E. C2 - 2002/// DA - 2002/// PY - 2002/// ER - TY - PAT TI - Silicon carbide LMOSFET with gate reach-through protection AU - Alok, D. C2 - 2002/// DA - 2002/// PY - 2002/// ER - TY - PAT TI - Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices AU - Alok, D. C2 - 2002/// DA - 2002/// PY - 2002/// ER -