Power Semiconductor Research Center - 1997

Thapar, N., & Baliga, B. J. (1997). The accumulation channel driven bipolar transistor (ACBT). IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180. https://doi.org/10.1109/55.568754

Sridhar, S., & Baliga, B. J. (1997). Output characteristics of the dual channel EST. SOLID-STATE ELECTRONICS, 41(8), 1133–1138. https://doi.org/10.1016/S0038-1101(97)00036-1

Sunkavalli, R., & Baliga, B. J. (1997). Analysis of on-state carrier distribution in the DI-LIGBT. SOLID-STATE ELECTRONICS, 41(5), 733–738. https://doi.org/10.1016/S0038-1101(96)00247-X

Shenoy, P. M., & Baliga, B. J. (1997). High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes. ELECTRONICS LETTERS, 33(12), 1086–1087. https://doi.org/10.1049/el:19970678

Alok, D., & Baliga, B. J. (1997). SiC device edge termination using finite area argon implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017. https://doi.org/10.1109/16.585559

Sridhar, S., & Baliga, B. J. (1997). SIMFCT: A MOS-gated FCT with high voltage-current saturation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021. https://doi.org/10.1109/16.641374

Alok, D., & Baliga, B. J. (1997). Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137. https://doi.org/10.1149/1.1837545

Sunkavalli, R., Baliga, B. J., & Tamba, A. (1997). Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2011–2016. https://doi.org/10.1109/16.641373

Sridhar, S., & Baliga, B. J. (1997). Current saturation mechanism and FBOSA of the SIMEST. SOLID-STATE ELECTRONICS, 41(4), 561–566. https://doi.org/10.1016/S0038-1101(96)00202-X