Power Semiconductor Research Center - 1998

Nagapudi, V., Sunkavalli, R., & Baliga, B. J. (1998). Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161. https://doi.org/10.1109/16.669579

Singh, R., & Baliga, B. J. (1998). Cryogenic operation of silicon power devices. https://doi.org/10.1007/978-1-4615-5751-7

Raghunathan, R., & Baliga, B. J. (1998). Role of defects in producing negative temperature dependence of breakdown voltage in SiC. APPLIED PHYSICS LETTERS, 72(24), 3196–3198. https://doi.org/10.1063/1.121591

Sridevan, S., & Baliga, B. J. (1998). Lateral N-channel inversion mode 4H-SiC MOSFET's. IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230. https://doi.org/10.1109/55.701425

Sawant, S., & Baliga, B. J. (1998). Improved DC-EST structure with diode diverter. ELECTRONICS LETTERS, 34(13), 1358–1360. https://doi.org/10.1049/el:19980967

Mehrotra, M., & Baliga, B. J. (1998). Reverse blocking lateral MOS-gated switches for AC power control applications. SOLID-STATE ELECTRONICS, 42(4), 573–579. https://doi.org/10.1016/S0038-1101(97)00286-4

Thapar, N., & Baliga, B. J. (1998). Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices. SOLID-STATE ELECTRONICS, 42(11), 1975–1979. https://doi.org/10.1016/S0038-1101(98)00179-8

Raghunathan, R., & Baliga, B. J. (1998). P-type 4H and 6H-SiC high-voltage Schottky barrier diodes. IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73. https://doi.org/10.1109/55.661168

Venkataraghavan, P., & Baliga, B. J. (1998). The dV/dt capability of MOS-gated thyristors. IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660–666. https://doi.org/10.1109/63.704134

Yamazaki, T., & Baliga, B. J. (1998). Analysis and suppression of latch-up during IGBT mode of DG-BRT operation. SOLID-STATE ELECTRONICS, 42(3), 393–399. https://doi.org/10.1016/S0038-1101(97)00215-3

Thapar, N., & Baliga, B. J. (1998). An experimental evaluation of the on-state performance of trench IGBT designs. SOLID-STATE ELECTRONICS, 42(5), 771–776. https://doi.org/10.1016/S0038-1101(97)00301-8