Power Semiconductor Research Center - 2000

Alok, D., Taskar, N., & Letavic, T. (2000). Method of forming a laterally-varying charge profile in silicon carbide substrate. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., Mukherjee, S., & Arnold, E. (2000). Lateral silicon carbide semiconductor device having a drift region with a varying doping level. Washington, DC: U.S. Patent and Trademark Office.

Bobde, M. D., & Baliga, B. J. (2000). Silicon planar ACCUFET: improved power MOSFET structure. ELECTRONICS LETTERS, 36(10), 913–915. https://doi.org/10.1049/el:20000647

Sawant, S., & Baliga, B. J. (2000). Current saturation control in silicon emitter switched thyristors. SOLID-STATE ELECTRONICS, 44(1), 133–142. https://doi.org/10.1016/S0038-1101(99)00217-8