Power Semiconductor Research Center - 2002

Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2002). Silicon carbide LMOSFET with gate reach-through protection. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2002). Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office.