Power Semiconductor Research Center - 2011

Ozbek, A. M., & Baliga, B. J. (2011). Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers. IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363. https://doi.org/10.1109/led.2011.2162221

Ozbek, A. M., & Baliga, B. J. (2011, August). Tunneling coefficient for GaN Schottky barrier diodes. https://doi.org/10.1016/j.sse.2011.04.016

Sung, W., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2011). A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension. IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882. https://doi.org/10.1109/led.2011.2144561

Ozbek, A. M., & Baliga, B. J. (2011). Planar Nearly Ideal Edge-Termination Technique for GaN Devices. IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302. https://doi.org/10.1109/led.2010.2095825