Power Semiconductor Research Center - 2012

Sung, W., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423. https://doi.org/10.1109/ted.2012.2203337

Huang, X., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices. IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594. https://doi.org/10.1109/led.2012.2215003

Sung, W., Baliga, B. J., & Huang, A. Q. (2012). A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048. https://doi.org/10.4028/www.scientific.net/msf.717-720.1045