Power Semiconductor Research Center - 2012

Sung, W. J., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs. IEEE Transactions on Electron Devices, 59(9), 2417–2423. https://doi.org/10.1109/ted.2012.2203337

Huang, X., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices. IEEE Electron Device Letters, 33(11), 1592–1594. https://doi.org/10.1109/led.2012.2215003

Sung, W., Baliga, B. J., & Huang, A. Q. (2012). A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA. Silicon carbide and related materials 2011, pts 1 and 2, 717-720, 1045–1048. https://doi.org/10.4028/www.scientific.net/msf.717-720.1045