Power Semiconductor Research Center - 2016 Sung, W., & Baliga, B. J. (2016). Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme. IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608. https://doi.org/10.1109/led.2016.2618720 Sung, W., & Baliga, B. J. (2016). A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension. IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612. https://doi.org/10.1109/led.2016.2623423 Baliga, B. J. (2016). SIC power devices: From conception to social impact (invited paper). 2016 46th european solid-state device research conference (essderc), 192–197. https://doi.org/10.1109/essderc.2016.7599619 Sung, W., Baliga, B. J., & Huang, A. Q. (2016). Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636. https://doi.org/10.1109/ted.2016.2532602