Power Semiconductor Research Center - 2016

Sung, W., & Baliga, B. J. (2016). Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single Ohmic/Schottky process scheme. IEEE Electron Device Letters, 37(12), 1605–1608. https://doi.org/10.1109/led.2016.2618720

Sung, W., & Baliga, B. J. (2016). A Near Ideal edge termination technique for 4500V 4H-SiC devices: The hybrid junction termination extension. IEEE Electron Device Letters, 37(12), 1609–1612. https://doi.org/10.1109/led.2016.2623423

Baliga, B. J. (2016). SIC power devices: From conception to social impact (invited paper). 2016 46th european solid-state device research conference (essderc), 192–197. https://doi.org/10.1109/essderc.2016.7599619

Sung, W., Baliga, B. J., & Huang, A. Q. (2016). Area-efficient bevel-edge termination techniques for SiC high-voltage devices. IEEE Transactions on Electron Devices, 63(4), 1630–1636. https://doi.org/10.1109/ted.2016.2532602