Power Semiconductor Research Center - 2018

Kumar, A., Parashar, S., Baliga, J., & Bhattacharya, S. (2018). Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs. Thirty-third annual ieee applied power electronics conference and exposition (apec 2018), 2737–2742. https://doi.org/10.1109/apec.2018.8341404

Jiang, Y. F., Sung, W., Baliga, J., Wang, S. Z., Lee, B., & Huang, A. (2018). Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height. Journal of Electronic Materials, 47(2), 927–931. https://doi.org/10.1007/s11664-017-5812-2

Han, K., Baliga, B. J., & Sung, W. (2018). A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Letters, 39(2), 248–251. https://doi.org/10.1109/led.2017.2785771