Power Semiconductor Research Center - 2019

Agarwal, A., Han, K., & Baliga, B. J. (2019). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V. IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795. https://doi.org/10.1109/LED.2019.2942259

Han, K., & Baliga, B. J. (2019). Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928. https://doi.org/10.1109/TED.2019.2929733

Han, K., & Baliga, B. J. (2019). Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET. IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166. https://doi.org/10.1109/LED.2019.2917637

Han, K., & Baliga, B. J. (2019). Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326. https://doi.org/10.1109/TED.2019.2905736

Agarwal, A., Han, K., & Baliga, B. J. (2019). Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs. IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776. https://doi.org/10.1109/LED.2019.2908078

Han, K., & Baliga, B. J. (2019). The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit. IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302. https://doi.org/10.1109/LED.2018.2889221