Power Semiconductor Research Center - 2020

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360272

Kanale, A., & Baliga, B. J. (2020). Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360275

Agarwal, A., Han, K., & Baliga, B. J. (2020). Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678. https://doi.org/10.1109/TED.2020.3005632

Kanale, A., & Baliga, B. J. (2020). Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter. IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361. https://doi.org/10.1109/TPEL.2019.2953589

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504. https://doi.org/10.1109/JEDS.2020.2991355

Han, K., & Baliga, B. J. (2020). 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor. IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440. https://doi.org/10.1109/LED.2020.2964773

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195. https://doi.org/10.1109/LED.2019.2956966