College of Engineering
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Displaying all 9 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1997 journal article
The accumulation channel driven bipolar transistor (acbt)
IEEE Electron Device Letters, 18(5), 178–180.
By: N. Thapar & B. Baliga
Output characteristics of the dual channel EST
Solid-State Electronics, 41(8), 1133–1138.
By: S. Sridhar & B. Baliga
Analysis of on-state carrier distribution in the di-ligbt
Solid-State Electronics, 41(5), 733–738.
By: R. Sunkavalli & B. Baliga
High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes
Electronics Letters, 33(12), 1086–1087.
By: P. Shenoy & B. Baliga
SIMFCT: A MOS-gated FCT with high voltage-current saturation
IEEE Transactions on Electron Devices, 44(11), 2017–2021.
SIC device edge termination using finite area argon implantation
IEEE Transactions on Electron Devices, 44(6), 1013–1017.
By: D. Alok & B. Baliga
Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation
Journal of the Electrochemical Society, 144(3), 1135–1137.
Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes
IEEE Transactions on Electron Devices, 44(11), 2011–2016.
By: R. Sunkavalli, B. Baliga & A. Tamba
Current saturation mechanism and FBSOA of the simest
Solid-State Electronics, 41(4), 561–566.