Power Semiconductor Research Center

Works Published in 1998

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Displaying all 11 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1998 journal article

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155โ€“1161.

By: V. Nagapudi n, R. Sunkavalli n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: dielectric isolation; lateral IGBT; power IC's
Source: Web Of Science
Added: August 6, 2018

1998 book

Cryogenic operation of silicon power devices

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

APPLIED PHYSICS LETTERS, 72(24), 3196โ€“3198.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(7), 228โ€“230.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: inversion layer; mobility; MOSFET; silicon carbide
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Improved DC-EST structure with diode diverter

ELECTRONICS LETTERS, 34(13), 1358โ€“1360.

By: S. Sawant n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Reverse blocking lateral MOS-gated switches for AC power control applications

SOLID-STATE ELECTRONICS, 42(4), 573โ€“579.

By: M. Mehrotra n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

SOLID-STATE ELECTRONICS, 42(11), 1975โ€“1979.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE ELECTRON DEVICE LETTERS, 19(3), 71โ€“73.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: breakdown; electric field; silicon carbide; Schottky rectifiers
Source: Web Of Science
Added: August 6, 2018

1998 journal article

The dV/dt capability of MOS-gated thyristors

IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660โ€“666.

By: P. Venkataraghavan n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: MOS gate; switching; thyristors
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Analysis and suppression of latch-up during IGBT mode of DG-BRT operation

SOLID-STATE ELECTRONICS, 42(3), 393โ€“399.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

An experimental evaluation of the on-state performance of trench IGBT designs

SOLID-STATE ELECTRONICS, 42(5), 771โ€“776.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

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