Power Semiconductor Research Center

Works Published in 1999

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Displaying all 7 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1999 journal article

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC

SOLID-STATE ELECTRONICS, 43(2), 199โ€“211.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601โ€“606.

By: A. Ramamurthy*, S. Sawant* & B. Baliga*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: insulated gate bipolar transistors; power semiconductor devices; semiconductor device modeling; semiconductor switches
Source: Web Of Science
Added: August 6, 2018

1999 journal article

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

SOLID-STATE ELECTRONICS, 43(10), 1901โ€“1908.

By: S. Sawant n, S. Sridhar n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor

SOLID-STATE ELECTRONICS, 43(2), 395โ€“402.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Analysis and optimization of the planar 6H-SiC ACCUFET

SOLID-STATE ELECTRONICS, 43(2), 213โ€“220.

By: P. Shenoy n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

SOLID-STATE ELECTRONICS, 43(1), 1โ€“9.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 article

High-temperature operation of SiC planar ACCUFET

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458โ€“1462.

By: R. Chilukuri n, P. Shenoy n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: ACCUFET; breakdown voltage; silicon carbide; specific on-resistance
Source: Web Of Science
Added: August 6, 2018

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