College of Engineering
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Displaying all 7 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1999 journal article
Temperature dependence of hole impact ionization coefficientsin 4H and 6H-SiC
Solid-State Electronics, 43(2), 199–211.
By: R. Raghunathan & B. Baliga*
Modeling the [dV/dt] of the IGBT during inductive turn off
IEEE Transactions on Power Electronics, 14(4), 601–606.
By: A. Ramamurthy, S. Sawant* & B. Baliga*
An experimental analysis of the dual gate emitter switched thyristor (DG-EST)
Solid-State Electronics, 43(10), 1901–1908.
By: S. Sawant*, S. Sridhar & B. Baliga*
Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor
Solid-State Electronics, 43(2), 395–402.
By: N. Thapar & B. Baliga*
Analysis and optimization of the planar 6H-SiC ACCUFET
Solid-State Electronics, 43(2), 213–220.
By: P. Shenoy* & B. Baliga*
The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier
Solid-State Electronics, 43(1), 1–9.
By: S. Mahalingam & B. Baliga*
High-temperature operation of SiC planar ACCUFET
IEEE Transactions on Industry Applications, 35(6), 1458–1462.
By: R. Chilukuri, P. Shenoy & B. Baliga