Power Semiconductor Research Center

Works Published in 2000

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2000 patent

Method of forming a laterally-varying charge profile in silicon carbide substrate

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok, N. Taskar & T. Letavic

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok, S. Mukherjee & E. Arnold

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Silicon planar ACCUFET: improved power MOSFET structure

ELECTRONICS LETTERS, 36(10), 913–915.

By: M. Bobde n & B. Baliga n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Current saturation control in silicon emitter switched thyristors

SOLID-STATE ELECTRONICS, 44(1), 133–142.

By: S. Sawant n & B. Baliga n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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