Displaying all 3 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2002 patent
Passivated silicon carbide devices with low leakage current and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Silicon carbide LMOSFET with gate reach-through protection
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
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