Displaying all 4 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2011 journal article
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.
2011 personal communication
Tunneling coefficient for GaN Schottky barrier diodes
Ozbek, A. M., & Baliga, B. J. (2011, August).
2011 journal article
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.
2011 journal article
Planar Nearly Ideal Edge-Termination Technique for GaN Devices
IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.
