Power Semiconductor Research Center

College of Engineering

Works Published in 2011

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2011 journal article

finite-zone argon implant edge termination for high-voltage GaN Schottky rectifiers

IEEE Electron Device Letters, 32(10), 1361–1363.

By: A. Ozbek & B. Baliga*

Source: NC State University Libraries
Added: August 6, 2018

2011 personal communication

Tunneling coefficient for GaN Schottky barrier diodes

By: A. Ozbek & B. Baliga*

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension

IEEE Electron Device Letters, 32(7), 880–882.

By: W. Sung, E. Van Brunt*, B. Baliga* & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Planar nearly ideal edge-termination technique for GaN devices

IEEE Electron Device Letters, 32(3), 300–302.

By: A. Ozbek & B. Baliga*

Source: NC State University Libraries
Added: August 6, 2018