Works Published in 2011
Displaying all 4 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2011 journal article
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.
author keywords: Breakdown voltage; edge termination; gallium nitride (GaN); Schottky diode
Source: Web Of Science
Added: August 6, 2018
2011 personal communication
Tunneling coefficient for GaN Schottky barrier diodes
Ozbek, A. M., & Baliga, B. J. (2011, August).
author keywords: Tunneling coefficient; GaN; Leakage current; Schottky barrier; Defects
Source: Web Of Science
Added: August 6, 2018
2011 journal article
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.
author keywords: Edge termination; junction termination extension (JTE); PiN diode; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2011 journal article
Planar Nearly Ideal Edge-Termination Technique for GaN Devices
IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.
author keywords: Breakdown voltage; edge termination; GaN; Schottky diode
Source: Web Of Science
Added: August 6, 2018
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