Power Semiconductor Research Center

Works Published in 2012

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Displaying all 3 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2012 journal article

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

co-author countries: United States of America 🇺🇸
author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.

co-author countries: United States of America 🇺🇸
author keywords: Edge termination; fault interruption device (FID); positive bevel; reverse blocking; symmetric blocking; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2012 article

A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.

By: W. Sung n, B. Baliga n & A. Huang n

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; fault isolation device; power distribution system; field controlled diode; field controlled thyristor; gating technique; cascode circuit; short circuit safe operating area
Source: Web Of Science
Added: August 6, 2018

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