Power Semiconductor Research Center

Works Published in 2018

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Displaying all 3 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2018 conference paper

Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

Thirty-third annual ieee applied power electronics conference and exposition (apec 2018), 2737–2742.

By: A. Kumar n, S. Parashar n, J. Baliga n & S. Bhattacharya n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2018 article

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

By: Y. Jiang n, W. Sung*, J. Baliga n, S. Wang n, B. Lee n & A. Huang n

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance
Source: Web Of Science
Added: August 6, 2018

2018 journal article

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; 4H-SiC; MOSFET; split gate; buffered gate; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: August 6, 2018

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