Power Semiconductor Research Center

Works Published in 2018

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2018 conference paper

Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

Thirty-third annual ieee applied power electronics conference and exposition (apec 2018), 2737–2742.

By: A. Kumar n, S. Parashar n, J. Baliga n & S. Bhattacharya n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

2018 article

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

By: Y. Jiang n, W. Sung*, J. Baliga n, S. Wang n, B. Lee n & A. Huang n

author keywords: Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2018 journal article

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.

author keywords: Silicon carbide; 4H-SiC; MOSFET; split gate; buffered gate; C-gd; Q(gd); HF-FOMs
TL;DR: A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET structure is proposed and experimentally demonstrated to have superior high frequency figures-of-merit (HF-FOMs) for the first time. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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