College of Engineering
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Displaying all 3 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2018 conference paper
Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs
Thirty-third annual ieee applied power electronics conference and exposition (apec 2018), 2737–2742.
By: A. Kumar, S. Parashar, J. Baliga & S. Bhattacharya
2018 journal article
Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height
Journal of Electronic Materials, 47(2), 927–931.
By: Y. Jiang, W. Sung, J. Baliga, S. Wang, B. Lee & A. Huang
A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results
IEEE Electron Device Letters, 39(2), 248–251.
By: K. Han, B. Baliga & W. Sung