Displaying all 6 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2019 journal article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
IEEE ELECTRON DEVICE LETTERS, 40(11), 1792โ1795.
2019 journal article
Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923โ3928.
2019 journal article
Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET
IEEE ELECTRON DEVICE LETTERS, 40(7), 1163โ1166.
2019 journal article
Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321โ2326.
2019 journal article
Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
IEEE ELECTRON DEVICE LETTERS, 40(5), 773โ776.
2019 journal article
The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
IEEE ELECTRON DEVICE LETTERS, 40(2), 299โ302.
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