Power Semiconductor Research Center

Works Published in 2019

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Displaying all 6 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792โ€“1795.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Logic gates; MOSFET; Voltage measurement; Capacitance; Silicon carbide; Electric fields; Silicon; 4H-SiC; 600 V; Cgd; gate oxide; inversion channel; planar-gate MOSFET; Qgd; Ron; sp; silicon carbide
Source: Web Of Science
Added: December 2, 2019

2019 journal article

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923โ€“3928.

By: K. Han n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: 4H-SiC; accumulation; body diode; inversion; MOSFET; silicon carbide; third quadrant
Source: Web Of Science
Added: September 16, 2019

2019 journal article

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163โ€“1166.

By: K. Han n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Silicon carbide; 4H-SiC; MOSFET; cell design; octagonal; OCTFET; split-gate; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: July 22, 2019

2019 journal article

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321โ€“2326.

By: K. Han n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: 4H-SiC; cell; C-gd; C-iss; hexagonal; HF-FOMs; linear; MOSFET; octagonal; Q(gd); silicon carbide (SiC); square
Source: Web Of Science
Added: June 17, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773โ€“776.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: 4H-SiC; 600 V; cell topologies; C-gd; hexagonal layout; linear layout; octagonal layout; planar MOSFET; Q(gd); R-on,R-sp; silicon carbide; square layout
Source: Web Of Science
Added: June 4, 2019

2019 journal article

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299โ€“302.

By: K. Han n & B. Baliga n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Silicon carbide; 4H-SiC; MOSFET; cell; ALL; octagonal; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: February 18, 2019

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