Works Published in 2020
Displaying all 7 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2020 article
2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
co-author countries:
United States of America 🇺🇸
author keywords: Junction Barrier Schottky (JBS) rectifier; 4H-SiC; Schottky barrier; Ni Schottky contact; Ti Schottky contact; leakage current knee voltage; on-resistance
Source: Web Of Science
Added: August 23, 2021
2020 article
Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
co-author countries:
United States of America 🇺🇸
author keywords: Gallium Nitride; BaSIC topology; power device; short-circuit; robustness; Sense voltage
Source: Web Of Science
Added: August 23, 2021
2020 journal article
Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.
co-author countries:
United States of America 🇺🇸
author keywords: 4H-SiC; accumulation; cell topology; hexagonal; linear; MOSFET; octagonal; silicon carbide (SiC); square
Source: Web Of Science
Added: September 14, 2020
2020 journal article
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter
IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.
co-author countries:
United States of America 🇺🇸
author keywords: Fault detection; insulated gate bipolar transistor (IGBT); power MOSFET; power semiconductor switches; robustness
Source: Web Of Science
Added: August 17, 2020
2020 journal article
2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.
co-author countries:
United States of America 🇺🇸
author keywords: 4H-SiC; 2.3 kV devices; accumulation channel; C-gd; planar-gate MOSFET; Q(gd); R-on,R-sp; silicon carbide; split-gate
doi.org (publisher)
Source: Web Of Science
Added: June 22, 2020
2020 journal article
1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor
IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.
co-author countries:
United States of America 🇺🇸
author keywords: Silicon carbide; 4H-SiC; MOSFET; SenseFET; monolithically integrated; sensing resistor; sensing voltage
Source: Web Of Science
Added: April 6, 2020
2020 article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)
Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.
author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition
Source: Web Of Science
Added: February 3, 2020
