Power Semiconductor Research Center

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 112–117.

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1267–1274.

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

Modeling and prediction of lattice parameters of binary spinel compounds (AM(2)X(4)) using support vector regression with Bayesian optimization

Alade, I. O., Zhang, Y., & Xu, X. (2021, August 3). NEW JOURNAL OF CHEMISTRY.

Machine learning modeling of metal surface energy

MATERIALS CHEMISTRY AND PHYSICS, 267.

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.