Power Semiconductor Research Center

Works Published in 2021

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Displaying works 1 - 20 of 21 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2021 article

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.

By: A. Kumar n, R. Kokkonda n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: Silicon Carbide; SiC MOSFETs; Short Circuit; Medium Voltage; Robustness
Source: Web Of Science
Added: July 5, 2022

2021 article

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

author keywords: Bidirectional isolated AC-DC conversion; solar energy; PV grid integration; dual active bridge; AC/DC DAB; SiC bidirectional FET; BiDFET; four quadrant power switch
Source: Web Of Science
Added: July 5, 2022

2021 article

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 112–117.

author keywords: Silicon Carbide; Bidirectional Switch; Switching Performance; Common-Source; Common-Drain
Source: Web Of Science
Added: May 10, 2022

2021 article

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

author keywords: BaSIC; Short-circuit; Silicon Carbide; Power MOSFET; Parallel; Current Scaling; Composite MOSFETs
Source: Web Of Science
Added: May 10, 2022

2021 article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.

By: S. Narasimhan n, A. Kanale n, S. Bhattacharya n & J. Baliga n

author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source; common-drain; current switch; medium-voltage; reverse-voltage blocking switch; wide-band gap devices; CSI; CS; CD; GaN; SiC
Source: Web Of Science
Added: May 10, 2022

2021 journal article

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.

author keywords: MOSFET; Silicon carbide; Silicon; Stress; Logic gates; Topology; Temperature measurement; Baliga Short-Circuit Improvement Concept (BaSIC) topology; depletion-mode MOSFET (DMM); power MOSFET; semiconductor device reliability; short-circuit (SC) currents
Source: Web Of Science
Added: December 20, 2021

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.

author keywords: 2.3 kV devices; 4H-SiC; C-gd; planar-gate MOSFET; Q(gd); R-ON; silicon carbide; thin gate oxide
Source: Web Of Science
Added: October 4, 2021

2021 article

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

By: A. Kumar n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: SiC MOSFET; medium voltage; PWM-CSI; reverse blocking; current switch
Source: Web Of Science
Added: September 20, 2021

2021 article

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1267–1274.

author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
Source: Web Of Science
Added: September 20, 2021

2021 article

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

By: A. Kumar n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: SiC MOSFET; medium voltage; 3.3-kV; high-speed motor drive; 2.3 kV drive; NPC
Source: Web Of Science
Added: September 20, 2021

2021 article

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.

author keywords: BaSIC topology; Silicon Carbide; Power MOSFET; Short-circuit; Robustness
Source: Web Of Science
Added: September 20, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

By: A. Agarwal n, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

author keywords: 4H-SiC; Wide Band Gap Semiconductor Device Fabrication; Foundry; Power MOSFET; ACCUFET; INVFET
Source: Web Of Science
Added: September 13, 2021

2021 article

Modeling and prediction of lattice parameters of binary spinel compounds (AM(2)X(4)) using support vector regression with Bayesian optimization

Alade, I. O., Zhang, Y., & Xu, X. (2021, August 3). NEW JOURNAL OF CHEMISTRY.

co-author countries: Saudi Arabia 🇸🇦
Source: Web Of Science
Added: August 9, 2021

2021 journal article

Machine learning modeling of metal surface energy

MATERIALS CHEMISTRY AND PHYSICS, 267.

author keywords: Gaussian process regression; Lattice parameters; Pure metals; Surface energy
Source: Web Of Science
Added: July 6, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-silicon carbide (SiC); cell design; hexagonal; inversion; junction barrier Schottky field effect transistor (JBSFET); linear; MOSFET; octagonal
Source: Web Of Science
Added: May 24, 2021

2021 journal article

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

author keywords: Power MOSFET; robustness; short-circuit currents; optimization
Source: Web Of Science
Added: May 24, 2021

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

author keywords: Silicon; MOSFET; Silicon carbide; Logic gates; Topology; Resistance; Inverters; BaSIC; EMM; power MOSFETs; short circuit capability; silicon carbide; topology
Source: Web Of Science
Added: April 19, 2021

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation-channel; analytical models; JBSFET; cell topology; linear; hexagonal; octagonal; figure-of-merit; numerical simulations; silicon carbide
Source: Web Of Science
Added: April 12, 2021

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; inversion; JBSFET; cell topology; linear; hexagonal; octagonal; gate oxide thickness
Source: Web Of Science
Added: March 22, 2021

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

author keywords: 650 V; 4H-SiC; 10Vgate drive; gate-drain charge; gate oxide; high-frequency figures-of-merit; power MOSFETs; reverse-transfer capacitance; short-circuit withstand time; Si CoolMOS; specific ON-resistance; switching loss
Source: Web Of Science
Added: December 14, 2020

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